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Study on the drain bias effect on negative bias temperature instability degradation of an ultra-short p-channel metal-oxide-semiconductor field-effect transistor
曹艳荣, 马晓华, 郝跃, 胡世刚
Study on the drain bias effect on negative bias temperature instability degradation of an ultra-short p-channel metal-oxide-semiconductor field-effect transistor
Cao Yan-Rong(曹艳荣), Ma Xiao-Hua(马晓华), Hao Yue(郝跃), and Hu Shi-Gang(胡世刚)
中国物理B . 2010, (
4
): 47307 -047307 . DOI: 10.1088/1674-1056/19/4/047307