An analytical threshold voltage model for dual-strained channel PMOSFET
秦珊珊, 张鹤鸣, 胡辉勇, 戴显英, 宣荣喜, 舒斌
An analytical threshold voltage model for dual-strained channel PMOSFET
Qin Shan-Shan(秦珊珊), Zhang He-Ming(张鹤鸣), Hu Hui-Yong(胡辉勇), Dai Xian-Ying(戴显英), Xuan Rong-Xi(宣荣喜), and Shu Bin(舒斌)
中国物理B
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2010, (11): 117309
-117309
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DOI: 10.1088/1674-1056/19/11/117309