Influence of annealing conditions on impurity species in arsenic-doped HgCdTe grown by molecular beam epitaxy
越方禹, 陈璐, 李亚巍, 胡志高, 孙琳, 杨平雄, 褚君浩
Influence of annealing conditions on impurity species in arsenic-doped HgCdTe grown by molecular beam epitaxy
Yue Fang-Yu(越方禹), Chen Lu(陈璐), Li Ya-Wei(李亚巍), Hu Zhi-Gao(胡志高), Sun Lin(孙琳), Yang Ping-Xiong(杨平雄), and Chu Jun-Hao(褚君浩)
中国物理B
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2010, (11): 117106
-117201
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DOI: 10.1088/1674-1056/19/11/117106