Effect of surface treatment of GaN based light emitting diode wafers on the leakage current of light emitting diode devices
王良吉, 张书明, 朱继红, 朱建军, 赵德刚, 刘宗顺, 江德生, 王玉田, 杨辉
Effect of surface treatment of GaN based light emitting diode wafers on the leakage current of light emitting diode devices
Wang Liang-Ji(王良吉), Zhang Shu-Ming(张书明), Zhu Ji-Hong(朱继红), Zhu Jian-Jun(朱建军), Zhao De-Gang(赵德刚), Liu Zong-Shun(刘宗顺), Jiang De-Sheng(江德生), Wang Yu-Tian(王玉田) , and Yang Hui(杨辉)
中国物理B
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2010, (1): 17307
-017307
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DOI: 10.1088/1674-1056/19/1/017307