Characterization of ion-implanted 4H-SiC Schottky barrier diodes
王守国, 张岩, 张义门, 张玉明
Characterization of ion-implanted 4H-SiC Schottky barrier diodes
Wang Shou-Guo(王守国), Zhang Yan(张岩), Zhang Yi-Men(张义门), and Zhang Yu-Ming(张玉明)
中国物理B . 2010, (1): 17203 -017203 .  DOI: 10.1088/1674-1056/19/1/017203