Intra-acceptor hole relaxation in Be δ-doped GaAs/AlAs multiple quantum wells
李素梅, 郑卫民, 宋迎新, 刘静, 初宁宁
Intra-acceptor hole relaxation in Be $\delta$-doped GaAs/AlAs multiple quantum wells
Li Su-Mei(李素梅), Zheng Wei-Min(郑卫民), Song Ying-Xin(宋迎新), Liu Jing(刘静), and Chu Ning-Ning(初宁宁)
中国物理B . 2009, (9): 3975 -3979 .  DOI: 10.1088/1674-1056/18/9/059