Experimental and numerical analysis of the multi-recessed gate structure for microwave silicon carbide power MESFETs
邓小川, 冯震, 张波, 李肇基, 李亮, 潘宏菽
Experimental and numerical analysis of the multi-recessed gate structure for microwave silicon carbide power MESFETs
Deng Xiao-Chuan(邓小川), Feng Zhen(冯震), Zhang Bo(张波), Li Zhao-Ji(李肇基), Li Liang(李亮), and Pan Hong-Shu(潘宏菽)
中国物理B
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2009, (7): 3018
-3023
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DOI: 10.1088/1674-1056/18/7/067