Degraded model of radiation-induced acceptor defects for GaN-based high electron mobility transistors (HEMTs)
范隆, 郝跃, 赵元富, 张进城, 高志远, 李培咸
Degraded model of radiation-induced acceptor defects for GaN-based high electron mobility transistors (HEMTs)
Fan Long(范隆), Hao Yue(郝跃), Zhao Yuan-Fu(赵元富), Zhang Jin-Cheng(张进城), Gao Zhi-Yuan(高志远), and Li Pei-Xian(李培咸)
中国物理B
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2009, (7): 2912
-2919
.
DOI: 10.1088/1674-1056/18/7/049