High-electric-field-stress-induced degradation of SiN passivated AlGaN/GaN high electron mobility transistors
谷文萍, 段焕涛, 倪金玉, 郝跃, 张进城, 冯倩, 马晓华
High-electric-field-stress-induced degradation of SiN passivated AlGaN/GaN high electron mobility transistors
Gu Wen-Ping(谷文萍), Duan Huan-Tao(段焕涛), Ni Jin-Yu(倪金玉), Hao Yue(郝跃), Zhang Jin-Cheng(张进城), Feng Qian(冯倩), and Ma Xiao-Hua(马晓华)
中国物理B
.
2009, (4): 1601
-1608
.
DOI: 10.1088/1674-1056/18/4/052