Influence of dislocations in the GaN layer on the electrical properties of an AlGaN/GaN heterostructure

高志远, 郝跃, 张进城, 李培咸, 谷文萍

Gao Zhi-Yuan(高志远),Hao Yue(郝跃), Zhang Jin-Cheng(张进城), Li Pei-Xian(李培咸), and Gu Wen-Ping(谷文萍)

中国物理B . 2009, (11): 4970 -4975 . DOI: 10.1088/1674-1056/18/11/059