The influence of strain-reducing layer on strain distribution and ground state energy levels of GaN/AlN quantum dot
刘玉敏, 俞重远, 任晓敏, 徐子欢
The influence of strain-reducing layer on strain distribution and ground state energy levels of GaN/AlN quantum dot
Liu Yu-Min(刘玉敏), Yu Zhong-Yuan(俞重远), Ren Xiao-Min(任晓敏), and Xu Zi-Huan(徐子欢)
中国物理B . 2009, (10): 4136 -4142 .  DOI: 10.1088/1674-1056/18/10/012