Influence of spacer layer thickness on the current-voltage characteristics of pseudomorphic AlAs/In
0.53Ga
0.47As/InAs resonant tunnelling diodes
张杨, 韩春林, 高建峰, 朱战平, 王保强, 曾一平
Influence of spacer layer thickness on the current-voltage characteristics of pseudomorphic AlAs/In
0.53Ga
0.47As/InAs resonant tunnelling diodes
Zhang Yang(张杨), Han Chun-Lin(韩春林), Gao Jian-Feng(高建峰), Zhu Zhan-Ping(朱战平), Wang Bao-Qiang(王保强), and Zeng Yi-Ping(曾一平)
中国物理B
.
2008, (4): 1472
-1474
.
DOI: 10.1088/1674-1056/17/4/054