A study on Al
2O
3 passivation in GaN MOS-HEMT by pulsed stress
岳远征, 郝跃, 张进城, 冯倩, 倪金玉, 马晓华
A study on Al
2O
3 passivation in GaN MOS-HEMT by pulsed stress
Yue Yuan-Zheng(岳远征), Hao Yue(郝跃), Zhang Jin-Cheng(张进城), Feng Qian(冯倩), Ni Jin-Yu(倪金玉), and Ma Xiao-Hua(马晓华)
中国物理B
.
2008, (4): 1405
-1409
.
DOI: 10.1088/1674-1056/17/4/042