A novel 10-nm physical gate length double-gate junction field effect transistor
侯晓宇, 黄 如, 陈 刚, 刘 晟, 张 兴, 俞 滨, 王阳元
A novel 10-nm physical gate length double-gate junction field effect transistor
Hou Xiao-Yu(侯晓宇), Huang Ru(黄如), Chen Gang(陈刚), Liu Sheng(刘晟), Zhang Xing(张兴), Yu Bin(俞滨), and Wang Yang-Yuan(王阳元)
中国物理B
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2008, (2): 685
-689
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DOI: 10.1088/1674-1056/17/2/054