Study on the dose rate upset effect of partially depleted silicon-on-insulator static random access memory
赵发展, 刘梦新, 郭天雷, 刘刚, 海潮和, 韩郑生, 杨善潮, 李瑞宾, 林东生, 陈伟
Study on the dose rate upset effect of partially depleted silicon-on-insulator static random access memory
Zhao Fa-Zhan (赵发展), Liu Meng-Xin (刘梦新), Guo Tian-Lei (郭天雷), Liu Gang (刘刚), Hai Chao-He (海潮和), Han Zheng-Sheng (韩郑生), Yang Shan-Chao (杨善潮), Li Rui-Bin (李瑞宾), Lin Dong-Sheng (林东生), Chen Wei (陈伟)
中国物理B
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2008, (12): 4599
-4605
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DOI: 10.1088/1674-1056/17/12/044