High density Al
2O
3/TaN-based metal--insulator-- metal capacitors in application to radio frequency integrated circuits
丁士进, 黄宇健, 黄玥, 潘少辉, 张卫, 汪礼康
High density Al
2O
3/TaN-based metal--insulator-- metal capacitors in application to radio frequency integrated circuits
Ding Shi-Jin(丁士进), Huang Yu-Jian(黄宇健), Huang Yue(黄玥), Pan Shao-Hui(潘少辉), Zhang Wei(张卫), and Wang Li-Kang(汪礼康)
中国物理B
.
2007, (9): 2803
-2808
.
DOI: 10.1088/1009-1963/16/9/051