GaN layers with different polarities prepared by radio frequency molecular beam epitaxy and characterized by Raman scattering
钟飞, 李新化, 邱凯, 尹志军, 姬长建, 曹先存, 韩奇峰, 陈家荣, 王玉琦
GaN layers with different polarities prepared by radio frequency molecular beam epitaxy and characterized by Raman scattering
Zhong Fei(钟飞), Li Xin-Hua(李新化), Qiu Kai(邱凯), Yin Zhi-Jun(尹志军), Ji Chang-Jian(姬长建), Cao Xian-Cun(曹先存), Han Qi-Feng(韩奇峰), Chen Jia-Rong(陈家荣), and Wang Yu-Qi(王玉琦)
中国物理B
.
2007, (9): 2786
-2790
.
DOI: 10.1088/1009-1963/16/9/048