Hot-carrier degradation for 90nm gate length LDD-NMOSFET with ultra-thin gate oxide under low gate voltage stress
陈海峰, 郝跃, 马晓华, 李康, 倪金玉
Hot-carrier degradation for 90nm gate length LDD-NMOSFET with ultra-thin gate oxide under low gate voltage stress
Chen Hai-Feng(陈海峰), Hao Yue(郝跃), Ma Xiao-Hua(马晓华), Li Kang(李康), and Ni Jin-Yu(倪金玉)
中国物理B . 2007, (3): 821 -825 .  DOI: 10.1088/1009-1963/16/3/044