Electrical properties and reliability of HfO 2 gate-dielectric MOS capacitors with trichloroethylene surface pretreatment
徐静平, 陈卫兵, 黎沛涛, 李艳萍, 陈铸略
Electrical properties and reliability of HfO 2 gate-dielectric MOS capacitors with trichloroethylene surface pretreatment
Xu Jing-Ping(徐静平), Chen Wei-Bing(陈卫兵), Lai Pui-To(黎沛涛), Li Yan-Ping(李艳萍), and Chan Chu-Lok(陈铸略)
中国物理B . 2007, (2): 529 -532 .  DOI: 10.1088/1009-1963/16/2/040