Study of total ionizing dose radiation effects on enclosed gate transistors in a commercial CMOS technology

李冬梅, 王志华, 皇甫丽英, 勾秋静

Li Dong-Mei(李冬梅), Wang Zhi-Hua(王志华), Huangfu Li-Ying(皇甫丽英), and Gou Qiu-Jing(勾秋静),

中国物理B . 2007, (12): 3760 -3765 . DOI: 10.1088/1009-1963/16/12/034