Hot-carrier degradation characteristics and explanation in 0.25μm PMOSFETs

刘红侠, 郝跃, I.D.Hawkins, A.R.Peaker

Liu Hong-Xia (刘红侠), Hao Yue (郝跃), Hawkins I. D., Peaker A. R.

中国物理B . 2005, (8): 1644 -1648 . DOI: 10.1088/1009-1963/14/8/032