Effect of annealing on photoluminescence and microstructures of InGaN/GaN multi-quantum well with Mg-doped p-type GaN
李忠辉, 于彤军, 杨志坚, 冯玉春, 张国义, 郭宝平, 牛憨笨
Effect of annealing on photoluminescence and microstructures of InGaN/GaN multi-quantum well with Mg-doped p-type GaN
Li Zhong-Hui (李忠辉), Yu Tong-Jun (于彤军), Yang Zhi-Jian (杨志坚), Feng Yu-Chun (冯玉春), Zhang Guo-Yi (张国义), Guo Bao-Ping (郭宝平), Niu Han-Ben (牛憨笨)
中国物理B
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2005, (4): 830
-833
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DOI: 10.1088/1009-1963/14/4/034