6H-SiC Schottky barrier source/drain NMOSFET with field-induced source/drain extension
汤晓燕, 张义门, 张玉明, 郜锦侠
6H-SiC Schottky barrier source/drain NMOSFET with field-induced source/drain extension
Tang Xiao-Yan (汤晓燕), Zhang Yi-Men (张义门), Zhang Yu-Ming (张玉明), Gao Jin-Xia (郜锦侠)
中国物理B . 2005, (3): 583 -585 .  DOI: 10.1088/1009-1963/14/3/028