Theoretical investigation of incomplete ionization of dopants in uniform and ion-implanted 4H-SiC MESFETs

王守国, 张义门, 张玉明

Wang Shou-Guo (王守国), Zhang Yi-Men (张义门), Zhang Yu-Ming (张玉明)

中国物理B . 2003, (1): 89 -93 . DOI: 10.1088/1009-1963/12/1/316