A new design and simulation of an aberration-corrected PEEM/ARPES/nano-ARPES instrument

doi:10.1088/1674-1056/adebed

中国物理B ›› 2025, Vol. 34 ›› Issue (9): 94101-094101.doi: 10.1088/1674-1056/adebed

所属专题： Featured Column — INSTRUMENTATION AND MEASUREMENT

A new design and simulation of an aberration-corrected PEEM/ARPES/nano-ARPES instrument

Yuqin Yang(杨玉琴)¹, Zichun Miao(苗滋春)², Shan Qiao(乔山)^3,1, Wenxin Tang(唐文新)², Ning Dai(戴宁)^4,1,†, and Weishi Wan(万唯实)^5,1,‡

1 ShanghaiTech University, Shanghai 201210, China;
2 Suzhou AISTech Co., Ltd., Suzhou 215133, China;
3 State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;
4 Shanghai Institute of Technical Physics of the Chinese Academy of Science, Shanghai 200083, China;
5 Quantum Science Center of Guangdong-Hong Kong-Macao Greater Bay Area, Shenzhen 518045, China

收稿日期:2025-04-11 修回日期:2025-06-24 接受日期:2025-07-04 出版日期:2025-08-21 发布日期:2025-09-17
通讯作者: Ning Dai, Weishi Wan E-mail:ndai@mail.sitp.ac.cn;wanweishi@quantumsc.cn
基金资助:
This work is supported by ShanghaiTech University and Quantum Science Center of Guangdong–Hong Kong–Macao Greater Bay Area, China (Grant No. SZZX2301006).

A new design and simulation of an aberration-corrected PEEM/ARPES/nano-ARPES instrument

Yuqin Yang(杨玉琴)¹, Zichun Miao(苗滋春)², Shan Qiao(乔山)^3,1, Wenxin Tang(唐文新)², Ning Dai(戴宁)^4,1,†, and Weishi Wan(万唯实)^5,1,‡

1 ShanghaiTech University, Shanghai 201210, China;
2 Suzhou AISTech Co., Ltd., Suzhou 215133, China;
3 State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;
4 Shanghai Institute of Technical Physics of the Chinese Academy of Science, Shanghai 200083, China;
5 Quantum Science Center of Guangdong-Hong Kong-Macao Greater Bay Area, Shenzhen 518045, China

Received:2025-04-11 Revised:2025-06-24 Accepted:2025-07-04 Online:2025-08-21 Published:2025-09-17
Contact: Ning Dai, Weishi Wan E-mail:ndai@mail.sitp.ac.cn;wanweishi@quantumsc.cn
Supported by:
This work is supported by ShanghaiTech University and Quantum Science Center of Guangdong–Hong Kong–Macao Greater Bay Area, China (Grant No. SZZX2301006).

摘要/Abstract

摘要： Over the past few decades, angle-resolved photoemission spectroscopy (ARPES) has been one of the important tools to study electronic structure of crystals. In recent years, the spatial resolution of around 150 nm has been reached through tight focusing of the light spot (nano-ARPES). At present, the lower limit of the spot size of the light on the sample has been reached. Another way to further improve the spatial resolution is through using apertures to only let electrons from a small area of the sample pass. With both back-focal plane and image apertures, the size of the selected area can be as small as 20 nm. Yet, without aberration correction, the maximum opening angle at the sample for 20 nm spatial resolution is usually smaller than 3$^\circ$, making this method not suitable for nano-ARPES. As shown in this paper, a conventional aberration corrector, which corrects chromatic and third-order spherical aberrations, is not enough either. Only when the fifth-order spherical aberration is also corrected, the opening angle at the sample is large enough for nano-ARPES. In this paper, the design of a time-of-fight PEEM/ARPES/nano-ARPES instrument, which is currently under development at the Quantum Science Center of Guangdong-Hong Kong-Macao Greater Bay Area, is presented. The main point of innovation is a five-electrode electron mirror corrector, which is used to correct simultaneously chromatic, third-order and fifth-order spherical aberrations, resulting in 1 nm spatial resolution with $\sim 230$ mrad aperture angle in PEEM mode. This makes feasible the method of using apertures to improve the spatial resolution of the nano-ARPES mode. A new design of the magnetic prism array (MPA) is also presented, which preserves the rotational symmetry better than the existing designs.

关键词: electrostatic lenses, aberrations, photoemission and photoelectron spectra

Abstract: Over the past few decades, angle-resolved photoemission spectroscopy (ARPES) has been one of the important tools to study electronic structure of crystals. In recent years, the spatial resolution of around 150 nm has been reached through tight focusing of the light spot (nano-ARPES). At present, the lower limit of the spot size of the light on the sample has been reached. Another way to further improve the spatial resolution is through using apertures to only let electrons from a small area of the sample pass. With both back-focal plane and image apertures, the size of the selected area can be as small as 20 nm. Yet, without aberration correction, the maximum opening angle at the sample for 20 nm spatial resolution is usually smaller than 3$^\circ$, making this method not suitable for nano-ARPES. As shown in this paper, a conventional aberration corrector, which corrects chromatic and third-order spherical aberrations, is not enough either. Only when the fifth-order spherical aberration is also corrected, the opening angle at the sample is large enough for nano-ARPES. In this paper, the design of a time-of-fight PEEM/ARPES/nano-ARPES instrument, which is currently under development at the Quantum Science Center of Guangdong-Hong Kong-Macao Greater Bay Area, is presented. The main point of innovation is a five-electrode electron mirror corrector, which is used to correct simultaneously chromatic, third-order and fifth-order spherical aberrations, resulting in 1 nm spatial resolution with $\sim 230$ mrad aperture angle in PEEM mode. This makes feasible the method of using apertures to improve the spatial resolution of the nano-ARPES mode. A new design of the magnetic prism array (MPA) is also presented, which preserves the rotational symmetry better than the existing designs.

Key words: electrostatic lenses, aberrations, photoemission and photoelectron spectra

中图分类号: (Electrostatic lenses, septa)

41.85.Ne

42.15.Fr (Aberrations) 79.60.-i (Photoemission and photoelectron spectra)

Yuqin Yang(杨玉琴), Zichun Miao(苗滋春), Shan Qiao(乔山), Wenxin Tang(唐文新), Ning Dai(戴宁), and Weishi Wan(万唯实). A new design and simulation of an aberration-corrected PEEM/ARPES/nano-ARPES instrument[J]. 中国物理B, 2025, 34(9): 94101-094101.

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A new design and simulation of an aberration-corrected PEEM/ARPES/nano-ARPES instrument

A new design and simulation of an aberration-corrected PEEM/ARPES/nano-ARPES instrument

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