中国物理B ›› 2025, Vol. 34 ›› Issue (4): 40303-040303.doi: 10.1088/1674-1056/adb68b

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RF detection of split-gate modes in Si-MOS quantum dots

Ning Chu(楚凝)1,2, Sheng-Kai Zhu(祝圣凯)1,2, Ao-Ran Li(李傲然)1,2, Chu Wang(王储)1,2, Wei-Zhu Liao(廖伟筑)1,2, Gang Cao(曹刚)1,2,3, Hai-Ou Li(李海欧)1,2,3,†, and Guo-Ping Guo(郭国平)1,2,3,4   

  1. 1 CAS Key Laboratory of Quantum Information, University of Science and Technology of China (USTC), Hefei 230026, China;
    2 CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China;
    3 Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China;
    4 Origin Quantum Computing Company Limited, Hefei 230088, China
  • 收稿日期:2025-01-23 修回日期:2025-02-11 接受日期:2025-02-17 出版日期:2025-04-15 发布日期:2025-04-15
  • 通讯作者: Hai-Ou Li E-mail:haiouli@ustc.edu.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 92165207, 12474490, 12034018, and 92265113), the Innovation Program for Quantum Science and Technology (Grant No. 2021ZD0302300), and the USTC Tang Scholarship.

RF detection of split-gate modes in Si-MOS quantum dots

Ning Chu(楚凝)1,2, Sheng-Kai Zhu(祝圣凯)1,2, Ao-Ran Li(李傲然)1,2, Chu Wang(王储)1,2, Wei-Zhu Liao(廖伟筑)1,2, Gang Cao(曹刚)1,2,3, Hai-Ou Li(李海欧)1,2,3,†, and Guo-Ping Guo(郭国平)1,2,3,4   

  1. 1 CAS Key Laboratory of Quantum Information, University of Science and Technology of China (USTC), Hefei 230026, China;
    2 CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China;
    3 Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China;
    4 Origin Quantum Computing Company Limited, Hefei 230088, China
  • Received:2025-01-23 Revised:2025-02-11 Accepted:2025-02-17 Online:2025-04-15 Published:2025-04-15
  • Contact: Hai-Ou Li E-mail:haiouli@ustc.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 92165207, 12474490, 12034018, and 92265113), the Innovation Program for Quantum Science and Technology (Grant No. 2021ZD0302300), and the USTC Tang Scholarship.

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摘要： Radio frequency (RF) reflectometry is an effective and sensitive technique for detecting charge signal in semiconductor quantum dots, and its measurement bandwidth can reach the MHz level. However, in accumulation mode devices, the presence of parasitic capacitance makes RF reflectometry more difficult. The universal approach is relocating the ion implantation region approximately 10 μm from the center of the single-electron transistor (SET) and optimizing the design of the accumulation gates. But, this method puts forward more stringent requirements for micro-nano fabrication processing. Here, we propose a split-gate structure that enables RF reflectometry when the ion-implanted region and the ohmic contact are farther from the SET center. In Si-MOS devices, we employ a split-gate structure to achieve RF detection, with the ion-implanted region located 150 μm away from the center of the SET. Within an integration time of 140 nanoseconds, we achieved a readout fidelity exceeding 99.8% and a detection bandwidth of over 2 MHz. This is an alternative solution for micro-nano fabrication processing that cannot achieve ion implantation areas closer to the center of the chip, and is applicable to various silicon-based semiconductor systems.

关键词: silicon-based quantum computing, Si-MOS, radio-frequency readout

Abstract: Radio frequency (RF) reflectometry is an effective and sensitive technique for detecting charge signal in semiconductor quantum dots, and its measurement bandwidth can reach the MHz level. However, in accumulation mode devices, the presence of parasitic capacitance makes RF reflectometry more difficult. The universal approach is relocating the ion implantation region approximately 10 μm from the center of the single-electron transistor (SET) and optimizing the design of the accumulation gates. But, this method puts forward more stringent requirements for micro-nano fabrication processing. Here, we propose a split-gate structure that enables RF reflectometry when the ion-implanted region and the ohmic contact are farther from the SET center. In Si-MOS devices, we employ a split-gate structure to achieve RF detection, with the ion-implanted region located 150 μm away from the center of the SET. Within an integration time of 140 nanoseconds, we achieved a readout fidelity exceeding 99.8% and a detection bandwidth of over 2 MHz. This is an alternative solution for micro-nano fabrication processing that cannot achieve ion implantation areas closer to the center of the chip, and is applicable to various silicon-based semiconductor systems.

Key words: silicon-based quantum computing, Si-MOS, radio-frequency readout

中图分类号:  (Quantum computation architectures and implementations)

  • 03.67.Lx
03.67.-a (Quantum information) 68.65.Hb (Quantum dots (patterned in quantum wells))