中国物理B ›› 2025, Vol. 34 ›› Issue (3): 34204-034204.doi: 10.1088/1674-1056/ada2ef

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Passive on-chip isolators based on the thin-film lithium niobate platform

Jiacheng Liu(刘嘉成)1, Gongyu Xia(夏功榆)1, Qilin Hong(洪琦琳)1, Pingyu Zhu(朱枰谕)2, Kai-Kai Zhang(张凯凯)2, Keyu Xia(夏可宇)3, Ping Xu(徐平)2, Shiqiao Qin(秦石乔)1, and Zhihong Zhu (朱志宏)1,†   

  1. 1 College of Advanced Interdisciplinary Studies & Hunan Provincial Key Laboratory of Novel Nano Optoelectronic Information Materials and Devices, National University of Defense Technology, Changsha 410073, China;
    2 Institute for Quantum Information and State Key Laboratory of High-Performance Computing, College of Computer Science and Technology, National University of Defense Technology, Changsha 410073, China;
    3 College of Engineering and Applied Sciences, National Laboratory of Solid State Microstructures, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210023, China
  • 收稿日期:2024-09-17 修回日期:2024-12-12 接受日期:2024-12-24 发布日期:2025-03-15
  • 通讯作者: Zhihong Zhu E-mail:zzhwcx@163.com
  • 基金资助:
    Project supported by the National Key Research and Development Program of China (Grant Nos. 2022YFF0712800 and 2019YFA0308700).

Passive on-chip isolators based on the thin-film lithium niobate platform

Jiacheng Liu(刘嘉成)1, Gongyu Xia(夏功榆)1, Qilin Hong(洪琦琳)1, Pingyu Zhu(朱枰谕)2, Kai-Kai Zhang(张凯凯)2, Keyu Xia(夏可宇)3, Ping Xu(徐平)2, Shiqiao Qin(秦石乔)1, and Zhihong Zhu (朱志宏)1,†   

  1. 1 College of Advanced Interdisciplinary Studies & Hunan Provincial Key Laboratory of Novel Nano Optoelectronic Information Materials and Devices, National University of Defense Technology, Changsha 410073, China;
    2 Institute for Quantum Information and State Key Laboratory of High-Performance Computing, College of Computer Science and Technology, National University of Defense Technology, Changsha 410073, China;
    3 College of Engineering and Applied Sciences, National Laboratory of Solid State Microstructures, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210023, China
  • Received:2024-09-17 Revised:2024-12-12 Accepted:2024-12-24 Published:2025-03-15
  • Contact: Zhihong Zhu E-mail:zzhwcx@163.com
  • Supported by:
    Project supported by the National Key Research and Development Program of China (Grant Nos. 2022YFF0712800 and 2019YFA0308700).

摘要: Optical isolators, the photonic analogs of electronic diodes, are essential for ensuring the unidirectional flow of light in optical systems, thereby mitigating the destabilizing effects of back reflections. Thin-film lithium niobate (TFLN), hailed as "the silicon of photonics," has emerged as a pivotal material in the realm of chip-scale nonlinear optics, propelling the demand for compact optical isolators. We report a breakthrough in the development of a fully passive, integrated optical isolator on the TFLN platform, leveraging the Kerr effect to achieve an impressive 10.3 dB of isolation with a minimal insertion loss of 1.87 dB. Further theoretical simulations have demonstrated that our design, when applied to a microring resonator with a $Q$ factor of 5$\times10^{6}$, can achieve 20 dB of isolation with an input power of merely 8 mW. This advancement underscores the immense potential of lithium niobate-based Kerr-effect isolators in propelling the integration and application of high-performance on-chip lasers, heralding a new era in integrated photonics.

关键词: thin-film lithium niobate, Kerr effect, optical isolator

Abstract: Optical isolators, the photonic analogs of electronic diodes, are essential for ensuring the unidirectional flow of light in optical systems, thereby mitigating the destabilizing effects of back reflections. Thin-film lithium niobate (TFLN), hailed as "the silicon of photonics," has emerged as a pivotal material in the realm of chip-scale nonlinear optics, propelling the demand for compact optical isolators. We report a breakthrough in the development of a fully passive, integrated optical isolator on the TFLN platform, leveraging the Kerr effect to achieve an impressive 10.3 dB of isolation with a minimal insertion loss of 1.87 dB. Further theoretical simulations have demonstrated that our design, when applied to a microring resonator with a $Q$ factor of 5$\times10^{6}$, can achieve 20 dB of isolation with an input power of merely 8 mW. This advancement underscores the immense potential of lithium niobate-based Kerr-effect isolators in propelling the integration and application of high-performance on-chip lasers, heralding a new era in integrated photonics.

Key words: thin-film lithium niobate, Kerr effect, optical isolator

中图分类号:  (Integrated optics)

  • 42.82.-m
42.82.Et (Waveguides, couplers, and arrays) 42.65.Hw (Phase conjugation; photorefractive and Kerr effects)