Valley switch effect in an α-T3 lattice-based superconducting interferometer

doi:10.1088/1674-1056/ad6f91

中国物理B ›› 2024, Vol. 33 ›› Issue (11): 117201-117201.doi: 10.1088/1674-1056/ad6f91

Valley switch effect in an α-T₃ lattice-based superconducting interferometer

Ya-Jun Wei(魏亚军) and Jun Wang(汪军)†

School of Physics, Southeast University, Nanjing 210096, China

收稿日期:2024-05-13 修回日期:2024-08-03 接受日期:2024-08-15 出版日期:2024-11-15 发布日期:2024-11-15
基金资助:
The work was supported by the National Natural Science Foundation of China (Grant No. 12174051).

Valley switch effect in an α-T₃ lattice-based superconducting interferometer

Ya-Jun Wei(魏亚军) and Jun Wang(汪军)†

School of Physics, Southeast University, Nanjing 210096, China

Received:2024-05-13 Revised:2024-08-03 Accepted:2024-08-15 Online:2024-11-15 Published:2024-11-15
Contact: Jun Wang E-mail:jwang@seu.edu.cn
Supported by:
The work was supported by the National Natural Science Foundation of China (Grant No. 12174051).

摘要/Abstract

摘要： Dirac electrons possess a valley degree of freedom, which is currently under investigation as a potential information carrier. We propose an approach to generate and manipulate the valley-switching current (VSC) through Andreev reflection using an interferometer-based superconductor hybrid junction. The interferometer comprises a ring-shaped structure formed by topological kink states in the $\alpha$-T$_3$ lattice via carefully designed electrostatic potentials. Our results demonstrate the feasibility of achieving a fully polarized VSC in this device without contamination from cotunneling electrons sharing the same valley as the incident electron. Furthermore, we show that control over the fully polarized VSC can be achieved by applying a nonlocal gate voltage or modifying the global parameter $\alpha$. The former alters the dynamic phase of electrons while the latter provides an $\alpha$-dependent Berry phase, both directly influencing quantum interference and thereby affecting performance in terms of generating and manipulating VSC, crucial for advancements in valleytronics.

关键词: valley switch effect, valleytronics, Andreev reflection, $\alpha$-T$_3$ lattice

Abstract: Dirac electrons possess a valley degree of freedom, which is currently under investigation as a potential information carrier. We propose an approach to generate and manipulate the valley-switching current (VSC) through Andreev reflection using an interferometer-based superconductor hybrid junction. The interferometer comprises a ring-shaped structure formed by topological kink states in the $\alpha$-T$_3$ lattice via carefully designed electrostatic potentials. Our results demonstrate the feasibility of achieving a fully polarized VSC in this device without contamination from cotunneling electrons sharing the same valley as the incident electron. Furthermore, we show that control over the fully polarized VSC can be achieved by applying a nonlocal gate voltage or modifying the global parameter $\alpha$. The former alters the dynamic phase of electrons while the latter provides an $\alpha$-dependent Berry phase, both directly influencing quantum interference and thereby affecting performance in terms of generating and manipulating VSC, crucial for advancements in valleytronics.

Key words: valley switch effect, valleytronics, Andreev reflection, $\alpha$-T$_3$ lattice

中图分类号: (Electronic conduction in metals and alloys)

72.15.-v

72.90.+y (Other topics in electronic transport in condensed matter) 73.20.-r (Electron states at surfaces and interfaces) 73.23.-b (Electronic transport in mesoscopic systems)

Ya-Jun Wei(魏亚军) and Jun Wang(汪军). Valley switch effect in an α-T₃ lattice-based superconducting interferometer[J]. 中国物理B, 2024, 33(11): 117201-117201.

Ya-Jun Wei(魏亚军) and Jun Wang(汪军). Valley switch effect in an α-T₃ lattice-based superconducting interferometer[J]. Chin. Phys. B, 2024, 33(11): 117201-117201.

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Valley switch effect in an α-T₃ lattice-based superconducting interferometer

Valley switch effect in an α-T₃ lattice-based superconducting interferometer

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