Coupling and characterization of a Si/SiGe triple quantum dot array with a microwave resonator

doi:10.1088/1674-1056/ad711d

中国物理B ›› 2024, Vol. 33 ›› Issue (9): 90311-090311.doi: 10.1088/1674-1056/ad711d

所属专题： SPECIAL TOPIC — Quantum computing and quantum sensing

Coupling and characterization of a Si/SiGe triple quantum dot array with a microwave resonator

Shun-Li Jiang(江顺利)^1,2, Tian-Yi Jiang(蒋天翼)^1,2, Yong-Qiang Xu(徐永强)^1,2, Rui Wu(吴睿)^1,2, Tian-Yue Hao(郝天岳)^1,2, Shu-Kun Ye(叶澍坤)^1,2, Ran-Ran Cai(蔡冉冉)^1,2, Bao-Chuan Wang(王保传)^1,2, Hai-Ou Li(李海欧)^1,2, Gang Cao(曹刚)^1,2,†, and Guo-Ping Guo(郭国平)^1,2,3

1 CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China;
2 CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China;
3 Origin Quantum Computing Company Limited, Hefei 230088, China

收稿日期:2024-06-16 修回日期:2024-08-16 接受日期:2024-08-20 发布日期:2024-09-04
通讯作者: Gang Cao E-mail:gcao@ustc.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 92265113, 12074368, 12304560, and 12034018) and China Postdoctoral Science Foundation (Grant Nos. BX20220281 and 2023M733408).

Coupling and characterization of a Si/SiGe triple quantum dot array with a microwave resonator

1 CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China;
2 CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China;
3 Origin Quantum Computing Company Limited, Hefei 230088, China

Received:2024-06-16 Revised:2024-08-16 Accepted:2024-08-20 Published:2024-09-04
Contact: Gang Cao E-mail:gcao@ustc.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 92265113, 12074368, 12304560, and 12034018) and China Postdoctoral Science Foundation (Grant Nos. BX20220281 and 2023M733408).

摘要/Abstract

摘要： Scaling up spin qubits in silicon-based quantum dots is one of the pivotal challenges in achieving large-scale semiconductor quantum computation. To satisfy the connectivity requirements and reduce the lithographic complexity, utilizing the qubit array structure and the circuit quantum electrodynamics (cQED) architecture together is expected to be a feasible scaling scheme. A triple-quantum dot (TQD) coupled with a superconducting resonator is regarded as a basic cell to demonstrate this extension scheme. In this article, we investigate a system consisting of a silicon TQD and a high-impedance TiN coplanar waveguide (CPW) resonator. The TQD can couple to the resonator via the right double-quantum dot (RDQD), which reaches the strong coupling regime with a charge-photon coupling strength of ${g_0}/({2\pi})=175$ ${\rm MHz}$. Moreover, we illustrate the high tunability of the TQD through the characterization of stability diagrams, quadruple points (QPs), and the quantum cellular automata (QCA) process. Our results contribute to fostering the exploration of silicon-based qubit integration.

关键词: triple-quantum dot, strong coupling, circuit quantum electrodynamics (cQED), scalable silicon-based cQED architectures

Abstract: Scaling up spin qubits in silicon-based quantum dots is one of the pivotal challenges in achieving large-scale semiconductor quantum computation. To satisfy the connectivity requirements and reduce the lithographic complexity, utilizing the qubit array structure and the circuit quantum electrodynamics (cQED) architecture together is expected to be a feasible scaling scheme. A triple-quantum dot (TQD) coupled with a superconducting resonator is regarded as a basic cell to demonstrate this extension scheme. In this article, we investigate a system consisting of a silicon TQD and a high-impedance TiN coplanar waveguide (CPW) resonator. The TQD can couple to the resonator via the right double-quantum dot (RDQD), which reaches the strong coupling regime with a charge-photon coupling strength of ${g_0}/({2\pi})=175$ ${\rm MHz}$. Moreover, we illustrate the high tunability of the TQD through the characterization of stability diagrams, quadruple points (QPs), and the quantum cellular automata (QCA) process. Our results contribute to fostering the exploration of silicon-based qubit integration.

Key words: triple-quantum dot, strong coupling, circuit quantum electrodynamics (cQED), scalable silicon-based cQED architectures

中图分类号: (Quantum computation architectures and implementations)

03.67.Lx

42.50.Wk (Mechanical effects of light on material media, microstructures and particles) 68.65.Hb (Quantum dots (patterned in quantum wells)) 42.60.Da (Resonators, cavities, amplifiers, arrays, and rings)

Shun-Li Jiang(江顺利), Tian-Yi Jiang(蒋天翼), Yong-Qiang Xu(徐永强), Rui Wu(吴睿), Tian-Yue Hao(郝天岳), Shu-Kun Ye(叶澍坤), Ran-Ran Cai(蔡冉冉), Bao-Chuan Wang(王保传), Hai-Ou Li(李海欧), Gang Cao(曹刚), and Guo-Ping Guo(郭国平). Coupling and characterization of a Si/SiGe triple quantum dot array with a microwave resonator[J]. 中国物理B, 2024, 33(9): 90311-090311.

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Coupling and characterization of a Si/SiGe triple quantum dot array with a microwave resonator

Coupling and characterization of a Si/SiGe triple quantum dot array with a microwave resonator

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