中国物理B ›› 2024, Vol. 33 ›› Issue (8): 86802-086802.doi: 10.1088/1674-1056/ad6132

所属专题： SPECIAL TOPIC — Stephen J. Pennycook: A research life in atomic-resolution STEM and EELS

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Controlled fabrication of freestanding monolayer SiC by electron irradiation

Yunli Da(笪蕴力)1,†, Ruichun Luo(罗瑞春)1,†, Bao Lei(雷宝)1, Wei Ji(季威)2, and Wu Zhou(周武)1,‡   

  1. 1 School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China;
    2 Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-Nano Devices, Renmin University of China, Beijing 100872, China
  • 收稿日期:2024-06-05 修回日期:2024-06-26 出版日期:2024-08-15 发布日期:2024-07-29
  • 通讯作者: Wu Zhou E-mail:wuzhou@ucas.ac.cn
  • 基金资助:
    This research is financially supported by the Ministry of Science and Technology (MOST) of China (Grant No. 2018YFE0202700), the Beijing Outstanding Young Scientist Program (Grant No. BJJWZYJH01201914430039), the China National Postdoctoral Program for Innovative Talents (Grant No. BX2021301), the Fundamental Research Funds for the Central Universities, and the Research Funds of Renmin University of China (Grants No. 22XNKJ30).

Controlled fabrication of freestanding monolayer SiC by electron irradiation

Yunli Da(笪蕴力)1,†, Ruichun Luo(罗瑞春)1,†, Bao Lei(雷宝)1, Wei Ji(季威)2, and Wu Zhou(周武)1,‡   

  1. 1 School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China;
    2 Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-Nano Devices, Renmin University of China, Beijing 100872, China
  • Received:2024-06-05 Revised:2024-06-26 Online:2024-08-15 Published:2024-07-29
  • Contact: Wu Zhou E-mail:wuzhou@ucas.ac.cn
  • Supported by:
    This research is financially supported by the Ministry of Science and Technology (MOST) of China (Grant No. 2018YFE0202700), the Beijing Outstanding Young Scientist Program (Grant No. BJJWZYJH01201914430039), the China National Postdoctoral Program for Innovative Talents (Grant No. BX2021301), the Fundamental Research Funds for the Central Universities, and the Research Funds of Renmin University of China (Grants No. 22XNKJ30).

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摘要： The design and preparation of novel quantum materials with atomic precision are crucial for exploring new physics and for device applications. Electron irradiation has been demonstrated as an effective method for preparing novel quantum materials and quantum structures that could be challenging to obtain otherwise. It features the advantages of precise control over the patterning of such new materials and their integration with other materials with different functionalities. Here, we present a new strategy for fabricating freestanding monolayer SiC within nanopores of a graphene membrane. By regulating the energy of the incident electron beam and the in-situ heating temperature in a scanning transmission electron microscope (STEM), we can effectively control the patterning of nanopores and subsequent growth of monolayer SiC within the graphene lattice. The resultant SiC monolayers seamlessly connect with the graphene lattice, forming a planar structure distinct by a wide direct bandgap. Our in-situ STEM observations further uncover that the growth of monolayer SiC within the graphene nanopore is driven by a combination of bond rotation and atom extrusion, providing new insights into the atom-by-atom self-assembly of freestanding two-dimensional (2D) monolayers.

关键词: monolayer SiC, 2D semiconductor, in-situ growth, in-situ STEM, defect engineering, graphene nanopores

Abstract: The design and preparation of novel quantum materials with atomic precision are crucial for exploring new physics and for device applications. Electron irradiation has been demonstrated as an effective method for preparing novel quantum materials and quantum structures that could be challenging to obtain otherwise. It features the advantages of precise control over the patterning of such new materials and their integration with other materials with different functionalities. Here, we present a new strategy for fabricating freestanding monolayer SiC within nanopores of a graphene membrane. By regulating the energy of the incident electron beam and the in-situ heating temperature in a scanning transmission electron microscope (STEM), we can effectively control the patterning of nanopores and subsequent growth of monolayer SiC within the graphene lattice. The resultant SiC monolayers seamlessly connect with the graphene lattice, forming a planar structure distinct by a wide direct bandgap. Our in-situ STEM observations further uncover that the growth of monolayer SiC within the graphene nanopore is driven by a combination of bond rotation and atom extrusion, providing new insights into the atom-by-atom self-assembly of freestanding two-dimensional (2D) monolayers.

Key words: monolayer SiC, 2D semiconductor, in-situ growth, in-situ STEM, defect engineering, graphene nanopores

中图分类号:  (Scanning transmission electron microscopy (STEM))

  • 68.37.Ma
61.82.Fk (Semiconductors) 81.16.-c (Methods of micro- and nanofabrication and processing) 81.05.ue (Graphene)