[1] Makabe T and Petrovic Z 2006 Plasma Electronics: Applications in Microelectronic Device Fabrication (New York: Taylor and Francis Group) pp. 2-3, ISBN: 0750309768 [2] Lieberman M A and Lichtenberg A J 2005 Principles of plasma discharges and materials processing, 2nd edn. (New York: Wiley) p. 1, ISBN: 9780471720010 [3] Ohtsu Y and Urasaki H 2010 Plasma Sources Sci. Technol. 19 045012 [4] Schmidt N, Schulze J, Scungel E and Czarnetzki U 2013 J. Phys. D: Appl. Phys. 46 505202 [5] Niikura C, Kondo M and Matsuda A 2004 J. Non-Crys. Solids 338-340 42 [6] Mussenbrock T 2015 Plasma Sources Sci. Technol. 24 024002 [7] Yang S, Zhang Y, Wang H Y, Wang S and Jiang W 2017 Phys. Plasmas 24 033504 [8] Wang L, Wen D Q, Hartmann P, Donkó Z, Derzsi A, Wang X F, Song Y H, Wang Y N and Schulze J 2020 Plasma Sources Sci. Technol. 29 105004 [9] Oberberg M, Kallhn J, Awakowicz P and Schulze J 2018 Plasma Sources Sci. Technol. 27 105018 [10] Zheng B, Fu Y, Wang K, Schuelke T and Fan Q H 2021 Plasma Sources Sci. Technol. 30 035019 [11] Wang L, Hartmann P, Donkó Z, Song Y H and Schulze J 2021 J. Vac. Sci. Technol. A 39 063004 [12] Lieberman M A, Lichtenberg A J, Kawamura E and Marakhtanov A M 2015 Plasma Sources Sci. Technol. 24 055011 [13] Wen D Q, Kawamura E, Lieberman M A, Lichtenberg A J and Wang Y N 2017 Plasma Sources Sci. Technol. 26 015007 [14] Wen D Q, Kawamura E, Lieberman M A, Lichtenberg A J and Wang Y N 2017 J. Phys. D: Appl. Phys. 50 495201 [15] Zhao K, Wen D Q, Liu Y X, Lieberman M A, Economou D J and Wang Y N 2019 Phys. Rev. Lett. 122 185002 [16] Lieberman M A, Booth J P, Chabert P, Rax J M and Turner M M 2002 Plasma Sources Sci. Technol. 11 283 [17] Mussenbrock T, Hemke T, Ziegler D, Brinkmann R P and Klick M 2008 Plasma Sources Sci. Technol. 17 025018 [18] Ohtsu Y and Kawasaki Y 2013 J. Appl. Phys. 113 033302 [19] Djerourou S, Djebli M and Ouchabane M 2019 Eur. Phys. J. Appl. Phys. 85 10801 [20] Ohtsu Y, Matsumoto N, Schulze J and Schuengel E 2016 Phys. Plasmas 23 033510 [21] Lee H S, Lee Y S, Seo S H and Chang H Y 2010 Appl. Phys. Lett. 97 081503 [22] Ohtsu Y, Yahata Y, Kagami J, Kawashimo Y and Takeuchi T 2013 IEEE Trans. Plasma Sci. 41 1856 [23] Lee H S, Lee Y S and Chang H Y 2012 Phys. Plasmas 19 093508 [24] Bardos L 1996 Surf. Coat. Technol. 86-87 648 [25] Bardos L, Barankova H and Berg S 1997 Surf. Coat. Technol. 97 723 [26] Kolobov V I and Tsendin L D 1995 Plasma Sources Sci. Technol. 4 551 [27] Lafleur T and Boswell R W 2012 Phys. Plasmas 19 023508 [28] He S J, Ha J, Qu Y X, Zhao K Y, Zhang B M and Li Q 2019 J. Phys. D: Appl. Phys. 52 095201 [29] Doyle S J, Lafleur T, Gibson A R, Tian P, Kushner M J and Dedrick J 2017 Plasma Sources Sci. Technol. 26 125005 [30] Zhang L Z, Zhao G M, Wang J and Han Q 2016 Phys. Plasmas 23 023508 [31] Durian J, Hartmann P, Matejcík S, Gibson A R and Donko Z 2022 Plasma Sources Sci. Technol. 31 095001 [32] Verboncoeur J P, Langdon A B and Gladd N T 1995 Comp. Phys. Commun. 87 199 [33] Vahedi V and Surendra M 1995 Comp. Phys. Commun. 87 179 [34] He F, Zhao X F, He S J and Ouyang J T 2010 Phys. Plasmas 17 033510 [35] Zhao X F, He F and Ouyang J T 2012 Phys. Lett A 376 2057 [36] He L L, He F, Ouyang J T and Dou W N 2020 Phys. Plasmas 27 123511 [37] Surendra M, Graves D B and Jellum G M 1990 Phys. Rev. A 41 1112 [38] Cramer W H 1959 J. Chem. Phys. 30 641 [39] Jiang X X, Li W P, Xu S W, He F and Chen Q 2017 Plasma Chem. Plasma Process 37 1281 [40] Liu Q, Liu Y, Samir T and Ma Z S 2014 Phys. Plasmas 21 083511 [41] Jiang X X, He F, Chen Q, Ge T and Ouyang J T 2014 Phys. Plasmas 21 033508 |