中国物理B ›› 2024, Vol. 33 ›› Issue (1): 16801-16801.doi: 10.1088/1674-1056/acdc0b

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Effects of Mg-doping temperature on the structural and electrical properties of nonpolar a-plane p-type GaN films

Kai Chen(陈凯)1, Jianguo Zhao(赵见国)1,2,†, Yu Ding(丁宇)1, Wenxiao Hu(胡文晓)1, Bin Liu(刘斌)1,‡, Tao Tao(陶涛)1, Zhe Zhuang(庄喆)1, Yu Yan(严羽)1, Zili Xie(谢自力)1, Jianhua Chang(常建华)2,§, Rong Zhang(张荣)1,3, and Youliao Zheng(郑有炓)1   

  1. 1 Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China;
    2 School of Electronics and Information Engineering, Nanjing University of Information Science and Technology, Nanjing 210044, China;
    3 Xiamen University, Xiamen 361005, China
  • 收稿日期:2023-03-15 修回日期:2023-05-22 接受日期:2023-06-07 出版日期:2023-12-13 发布日期:2023-12-13
  • 通讯作者: Jianguo Zhao, Bin Liu, Jianhua Chang E-mail:zhaojg@nuist.edu.cn;bliu@nju.edu.cn;jianhuachang@nuist.edu.cn
  • 基金资助:
    Project supported by the National Key Research and Development Program of China (Grant Nos. 2021YFB3601000 and 2021YFB3601002), the National Natural Science Foundation of China (Grant Nos. 62074077, 61921005, 61974062, 62204121, and 61904082), Leading-edge Technology Program of Jiangsu Natural Science Foundation (Grant No. BE2021008-2), and the China Postdoctoral Science Foundation (Grant No. 2020M671441).

Effects of Mg-doping temperature on the structural and electrical properties of nonpolar a-plane p-type GaN films

Kai Chen(陈凯)1, Jianguo Zhao(赵见国)1,2,†, Yu Ding(丁宇)1, Wenxiao Hu(胡文晓)1, Bin Liu(刘斌)1,‡, Tao Tao(陶涛)1, Zhe Zhuang(庄喆)1, Yu Yan(严羽)1, Zili Xie(谢自力)1, Jianhua Chang(常建华)2,§, Rong Zhang(张荣)1,3, and Youliao Zheng(郑有炓)1   

  1. 1 Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China;
    2 School of Electronics and Information Engineering, Nanjing University of Information Science and Technology, Nanjing 210044, China;
    3 Xiamen University, Xiamen 361005, China
  • Received:2023-03-15 Revised:2023-05-22 Accepted:2023-06-07 Online:2023-12-13 Published:2023-12-13
  • Contact: Jianguo Zhao, Bin Liu, Jianhua Chang E-mail:zhaojg@nuist.edu.cn;bliu@nju.edu.cn;jianhuachang@nuist.edu.cn
  • Supported by:
    Project supported by the National Key Research and Development Program of China (Grant Nos. 2021YFB3601000 and 2021YFB3601002), the National Natural Science Foundation of China (Grant Nos. 62074077, 61921005, 61974062, 62204121, and 61904082), Leading-edge Technology Program of Jiangsu Natural Science Foundation (Grant No. BE2021008-2), and the China Postdoctoral Science Foundation (Grant No. 2020M671441).

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摘要： Nonpolar (11—20) a-plane p-type GaN films were successfully grown on r-plane sapphire substrate with the metal—organic chemical vapor deposition (MOCVD) system. The effects of Mg-doping temperature on the structural and electrical properties of nonpolar p-type GaN films were investigated in detail. It is found that all the surface morphology, crystalline quality, strains, and electrical properties of nonpolar a-plane p-type GaN films are interconnected, and are closely related to the Mg-doping temperature. This means that a proper performance of nonpolar p-type GaN can be expected by optimizing the Mg-doping temperature. In fact, a hole concentration of 1.3×1018 cm-3, a high Mg activation efficiency of 6.5%, an activation energy of 114 meV for Mg acceptor, and a low anisotropy of 8.3% in crystalline quality were achieved with a growth temperature of 990 ℃. This approach to optimizing the Mg-doping temperature of the nonpolar a-plane p-type GaN film provides an effective way to fabricate high-efficiency optoelectronic devices in the future.

关键词: nonpolar a-plane GaN film, Mg-doping temperature, strains, activation efficiency

Abstract: Nonpolar (11—20) a-plane p-type GaN films were successfully grown on r-plane sapphire substrate with the metal—organic chemical vapor deposition (MOCVD) system. The effects of Mg-doping temperature on the structural and electrical properties of nonpolar p-type GaN films were investigated in detail. It is found that all the surface morphology, crystalline quality, strains, and electrical properties of nonpolar a-plane p-type GaN films are interconnected, and are closely related to the Mg-doping temperature. This means that a proper performance of nonpolar p-type GaN can be expected by optimizing the Mg-doping temperature. In fact, a hole concentration of 1.3×1018 cm-3, a high Mg activation efficiency of 6.5%, an activation energy of 114 meV for Mg acceptor, and a low anisotropy of 8.3% in crystalline quality were achieved with a growth temperature of 990 ℃. This approach to optimizing the Mg-doping temperature of the nonpolar a-plane p-type GaN film provides an effective way to fabricate high-efficiency optoelectronic devices in the future.

Key words: nonpolar a-plane GaN film, Mg-doping temperature, strains, activation efficiency

中图分类号:  (Semiconductors)

  • 68.35.bg
61.05.C- (X-ray diffraction and scattering) 74.25.nd (Raman and optical spectroscopy) 68.37.Ps (Atomic force microscopy (AFM))