中国物理B ›› 2023, Vol. 32 ›› Issue (7): 78506-078506.doi: 10.1088/1674-1056/acad69
Min-Hui Ji(冀敏慧)1, Xin-Miao Zhang(张欣苗)1, Meng-Chun Pan(潘孟春)1, Qing-Fa Du(杜青法)1, Yue-Guo Hu(胡悦国)1, Jia-Fei Hu(胡佳飞)1, Wei-Cheng Qiu(邱伟成)1, Jun-Ping Peng(彭俊平)1, Zhu Lin(林珠)2, and Pei-Sen Li(李裴森)1,†
Min-Hui Ji(冀敏慧)1, Xin-Miao Zhang(张欣苗)1, Meng-Chun Pan(潘孟春)1, Qing-Fa Du(杜青法)1, Yue-Guo Hu(胡悦国)1, Jia-Fei Hu(胡佳飞)1, Wei-Cheng Qiu(邱伟成)1, Jun-Ping Peng(彭俊平)1, Zhu Lin(林珠)2, and Pei-Sen Li(李裴森)1,†
摘要: The spin-transfer-torque (STT) magnetic tunneling junction (MTJ) device is one of the prominent candidates for spintronic logic circuit and neuromorphic computing. Therefore, building a simulation framework of hybrid STT-MTJ/CMOS (complementary metal-oxide-semiconductor) circuits is of great value for designing a new kind of computing paradigm based on the spintronic devices. In this work, we develop a simulation framework of hybrid STT-MTJ/CMOS circuits based on MATLAB/Simulink, which is mainly composed of a physics-based STT-MTJ model, a controlled resistor, and a current sensor. In the proposed framework, the STT-MTJ model, based on the Landau-Lifshitz-Gilbert-Slonczewsk (LLGS) equation, is implemented using the MATLAB script. The proposed simulation framework is modularized design, with the advantage of simple-to-use and easy-to-expand. To prove the effectiveness of the proposed framework, the STT-MTJ model is benchmarked with experimental results. Furthermore, the pre-charge sense amplifier (PCSA) circuit consisting of two STT-MTJ devices is validated and the electrical coupling of two spin-torque oscillators is simulated. The results demonstrate the effectiveness of our simulation framework.
中图分类号: (Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields)