中国物理B ›› 2023, Vol. 32 ›› Issue (7): 74208-074208.doi: 10.1088/1674-1056/aca205

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Enhanced and controllable reflected group delay based on Tamm surface plasmons with Dirac semimetals

Qiwen Zheng(郑棋文)1, Wenguang Lu(卢文广)3, Jiaqing Xu(胥加青)2, Yunyang Ye(叶云洋)2,†, Xinmin Zhao(赵新民)1,‡, and Leyong Jiang(蒋乐勇)1   

  1. 1 School of Physics and Electronics, Hunan Normal University, Changsha 410081, China;
    2 School of Intelligent Manufacturing and Electronic Engineering, Wenzhou University of Technology, Wenzhou 325035, China;
    3 School of Electronic Science and Engineering, National University of Defense Technology, Changsha 410073, China
  • 收稿日期:2022-08-01 修回日期:2022-11-06 接受日期:2022-11-11 出版日期:2023-06-15 发布日期:2023-07-05
  • 通讯作者: Yunyang Ye, Xinmin Zhao E-mail:20200285@wzu.edu.cn;zhaoxinmin@hunnu.edu.cn
  • 基金资助:
    Project supported by the Scientific research project of Zhejiang Provincial Department of Education (Grant No. Y202250547), the Scientific Research Project of Wenzhou University of Technology (Grant No. ky202205), and the Hunan Provincial Natural Science Foundation of China (Grant No. 2022JJ30394).

Enhanced and controllable reflected group delay based on Tamm surface plasmons with Dirac semimetals

Qiwen Zheng(郑棋文)1, Wenguang Lu(卢文广)3, Jiaqing Xu(胥加青)2, Yunyang Ye(叶云洋)2,†, Xinmin Zhao(赵新民)1,‡, and Leyong Jiang(蒋乐勇)1   

  1. 1 School of Physics and Electronics, Hunan Normal University, Changsha 410081, China;
    2 School of Intelligent Manufacturing and Electronic Engineering, Wenzhou University of Technology, Wenzhou 325035, China;
    3 School of Electronic Science and Engineering, National University of Defense Technology, Changsha 410073, China
  • Received:2022-08-01 Revised:2022-11-06 Accepted:2022-11-11 Online:2023-06-15 Published:2023-07-05
  • Contact: Yunyang Ye, Xinmin Zhao E-mail:20200285@wzu.edu.cn;zhaoxinmin@hunnu.edu.cn
  • Supported by:
    Project supported by the Scientific research project of Zhejiang Provincial Department of Education (Grant No. Y202250547), the Scientific Research Project of Wenzhou University of Technology (Grant No. ky202205), and the Hunan Provincial Natural Science Foundation of China (Grant No. 2022JJ30394).

摘要: The reflected group delay from a multilayer structure comprising a one-dimensional photonic crystal coated with a bulk Dirac semimetal (BDS) separated by a spacer layer is investigated theoretically. It is shown that the group delay of the reflected beam in this structure can be significantly negatively enhanced and switched from negative to positive. The enhanced group delay originates from the steep phase change caused by the excitation of the optical Tamm state at the interface between the BDS and spacer layer. Moreover, positive and negative group delays can be actively tuned through the Fermi energy and the relaxation time of the BDS. We believe that this enhanced and tunable delay scheme has important research significance for the fabrication of optical delay devices.

关键词: group delay, Tamm plasmons, Dirac semimetals

Abstract: The reflected group delay from a multilayer structure comprising a one-dimensional photonic crystal coated with a bulk Dirac semimetal (BDS) separated by a spacer layer is investigated theoretically. It is shown that the group delay of the reflected beam in this structure can be significantly negatively enhanced and switched from negative to positive. The enhanced group delay originates from the steep phase change caused by the excitation of the optical Tamm state at the interface between the BDS and spacer layer. Moreover, positive and negative group delays can be actively tuned through the Fermi energy and the relaxation time of the BDS. We believe that this enhanced and tunable delay scheme has important research significance for the fabrication of optical delay devices.

Key words: group delay, Tamm plasmons, Dirac semimetals

中图分类号:  (Optical elements, devices, and systems)

  • 42.79.-e
42.79.Sz (Optical communication systems, multiplexers, and demultiplexers?) 85.85.+j (Micro- and nano-electromechanical systems (MEMS/NEMS) and devices)