Critical behavior in the epitaxial growth of two-dimensional tellurium films on SrTiO3 (001) substrates

doi:10.1088/1674-1056/acc80d

中国物理B ›› 2023, Vol. 32 ›› Issue (6): 66802-066802.doi: 10.1088/1674-1056/acc80d

Critical behavior in the epitaxial growth of two-dimensional tellurium films on SrTiO₃ (001) substrates

Haimin Zhang(张海民), Dezhi Song(宋德志), Fuyang Huang(黄扶旸), Jun Zhang(仉君), and Ye-Ping Jiang(蒋烨平)^†

Key Laboratory of Polar Materials and Devices(MOE) and Department of Electronics, East China Normal University, Shanghai 200241, China

收稿日期:2023-03-02 修回日期:2023-03-09 接受日期:2023-03-28 出版日期:2023-05-17 发布日期:2023-05-22
通讯作者: Ye-Ping Jiang E-mail:ypjiang@clpm.ecnu.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61804056 and 92065102) and the National Key R&D Program of China (Grant No. 2022YFA1403100).

Critical behavior in the epitaxial growth of two-dimensional tellurium films on SrTiO₃ (001) substrates

Haimin Zhang(张海民), Dezhi Song(宋德志), Fuyang Huang(黄扶旸), Jun Zhang(仉君), and Ye-Ping Jiang(蒋烨平)^†

Key Laboratory of Polar Materials and Devices(MOE) and Department of Electronics, East China Normal University, Shanghai 200241, China

Received:2023-03-02 Revised:2023-03-09 Accepted:2023-03-28 Online:2023-05-17 Published:2023-05-22
Contact: Ye-Ping Jiang E-mail:ypjiang@clpm.ecnu.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61804056 and 92065102) and the National Key R&D Program of China (Grant No. 2022YFA1403100).

摘要/Abstract

摘要： Materials' properties may differ in the thin-film form, especially for epitaxial ultra-thin films, where the substrates play an important role in their deviation from the bulk quality. Here by molecular beam epitaxy (MBE) and scanning tunneling microscopy/spectroscopy, we investigate the growth kinetics of ultra-thin tellurium (Te) films on SrTiO₃ (STO) (001). The MBE growth of Te films usually exhibits Volmer-Weber (VW) island growth mode and no a-few-monolayer film with full coverage has been reported. The absence of wetting-layer formation in the VW growth mode of Te on STO (001) is resulted from its low diffusion barriers as well as its relatively higher surface energy compared with those of the substrate and the interface. Here we circumvent these limiting factors and achieve the growth of ultra-thin β-Te films with near-complete coverages by driving the growth kinetics to the extreme condition. There is a critical thickness (3 monolayer) above which the two-dimensional Te films can form on the STO (001) substrate. In addition, the scanning tunneling spectra on the ultra-thin Te film grown on STO exhibits an enormously large forbidden gap compared with that grown on the graphene substrate. Our work establishes the necessary conditions for the growth of ultra-thin materials with similar kinetics and thermodynamics.

关键词: molecular beam epitaxy, ultra-thin films, electronic structure

Abstract: Materials' properties may differ in the thin-film form, especially for epitaxial ultra-thin films, where the substrates play an important role in their deviation from the bulk quality. Here by molecular beam epitaxy (MBE) and scanning tunneling microscopy/spectroscopy, we investigate the growth kinetics of ultra-thin tellurium (Te) films on SrTiO₃ (STO) (001). The MBE growth of Te films usually exhibits Volmer-Weber (VW) island growth mode and no a-few-monolayer film with full coverage has been reported. The absence of wetting-layer formation in the VW growth mode of Te on STO (001) is resulted from its low diffusion barriers as well as its relatively higher surface energy compared with those of the substrate and the interface. Here we circumvent these limiting factors and achieve the growth of ultra-thin β-Te films with near-complete coverages by driving the growth kinetics to the extreme condition. There is a critical thickness (3 monolayer) above which the two-dimensional Te films can form on the STO (001) substrate. In addition, the scanning tunneling spectra on the ultra-thin Te film grown on STO exhibits an enormously large forbidden gap compared with that grown on the graphene substrate. Our work establishes the necessary conditions for the growth of ultra-thin materials with similar kinetics and thermodynamics.

Key words: molecular beam epitaxy, ultra-thin films, electronic structure

中图分类号: (Thin film structure and morphology)

68.55.-a

36.20.Kd (Electronic structure and spectra) 07.79.Cz (Scanning tunneling microscopes) 73.61.Cw (Elemental semiconductors)

Haimin Zhang(张海民), Dezhi Song(宋德志), Fuyang Huang(黄扶旸), Jun Zhang(仉君), and Ye-Ping Jiang(蒋烨平). Critical behavior in the epitaxial growth of two-dimensional tellurium films on SrTiO₃ (001) substrates[J]. 中国物理B, 2023, 32(6): 66802-066802.

参考文献

[1] Novoselov K S, Geim A K, Morozov S V, Jiang D, Zhang Y, Dubonos S V, Grigorieva I V and Firsov A A2004 Science 306 666
[2] Konig M, Wiedmann S, Brune C, Roth A, Buhmann H, Molenkamp L W, Qi X L and Zhang S C2007 Science 318 766
[3] Chen P, Pai W W, Chan Y H, Sun W L, Xu C Z, Lin D S, Chou M Y, Fedorov A V and Chiang T C2018 Nat. Commun. 9 2003
[4] Wu S, Fatemi V, Gibson Q D, Watanabe K, Taniguchi T, Cava R J and Jarillo-Herrero P2018 Science 359 76
[5] Caviglia A D, Gariglio S, Reyren N, Jaccard D, Schneider T, Gabay M, Thiel S, Hammerl G, Mannhart J and Triscone J M2008 Nature 456 624
[6] Ge J F, Liu Z L, Liu C, Gao C L, Qian D, Xue Q K, Liu Y and Jia J F2015 Nat. Mater. 14 285
[7] Chang K, Liu J, Lin H, Wang N, Zhao K, Zhang A, Jin F, Zhong Y, Hu X, Duan W, Zhang Q, Fu L, Xue Q K, Chen X and Ji S H2016 Science 353 274
[8] Chang K, Kaloni T P, Lin H, Bedoya-Pinto A, Pandeya A K, Kostanovskiy I, Zhao K, Zhong Y, Hu X, Xue Q K, Chen X, Ji S H, Barraza-Lopez S and Parkin S S P2019 Adv. Mater. 31 1804428
[9] Schaibley J R, Yu H Y, Clark G, Rivera P, Ross J S, Seyler K L, Yao W, and Xu X D2016 Nat. Rev. Mater. 1 15
[10] Reis F, Li G, Dudy L, Bauernfeind M, Glass S, Hanke W, Thomale R, Schafer J and Claessen R2017 Science 357 287
[11] Yang F, Miao L, Wang Z F, Yao M Y, Zhu F, Song Y R, Wang M X, Xu J P, Fedorov A V, Sun Z, Zhang G B, Liu C, Liu F, Qian D, Gao C L, and Jia J F2012 Phys. Rev. Lett. 109 016801
[12] Deng J, Xia B, Ma X, Chen H, Shan H, Zhai X, Li B, Zhao A, Xu Y, Duan W, Zhang S C, Wang B and Hou J G2018 Nat. Mater. 17 1081
[13] Zhang J L, Zhao S, Han C, Wang Z, Zhong S, Sun S, Guo R, Zhou X, Gu C D, Yuan K D, Li Z and Chen W2016 Nano Lett. 16 4903
[14] Peng M, Xie R Z, Wang Z, et al.2021 Sci. Adv. 7 11
[15] Wang Y X, Qiu G, Wang R X, Huang S Y, Wang Q X, Liu Y Y, Du Y C, Goddard W A, Kim M J, Xu X F, Ye P D and Wu W Z2018 Nat. Electron. 1 228
[16] Yang P, Zha J, Gao G, Zheng L, Huang H, Xia Y, Xu S, Xiong T, Zhang Z, Yang Z, Chen Y, Ki D K, Liou J J, Liao W and Tan C2022 Nano-Micro Lett. 14 109
[17] Agapito L A, Kioussis N, Goddard W A 3rd and Ong N P2013 Phys. Rev. Lett. 110 176401
[18] Zhu Z, Cai X, Yi S, Chen J, Dai Y, Niu C, Guo Z, Xie M, Liu F, Cho J H, Jia Y and Zhang Z2017 Phys. Rev. Lett. 119 106101
[19] Xian L D, Paz A P, Bianco E, Ajayan P M and Rubio A2017 2D Mater. 4 041003
[20] Zhang W, Wu Q S, Yazyev O V, Weng H M, Guo Z X, Cheng W D and Chai G L2018 Phys. Rev. B 98 115411
[21] Huang X, Guan J, Lin Z, Liu B, Xing S, Wang W and Guo J2017 Nano Lett. 17 4619
[22] Gao Z, Tao F and Ren J2018 Nanoscale 10 12997
[23] Xian J J, Wang C, Zhang Z M, Qin L, Ji W, Chen F C, Luo X, Sun Y P, Zhang W H and Fu Y S2020 Nanoscale 12 1994
[24] Miao G Y, Qiao J S, Huang X C, Liu B, Zhong W L, Wang W H, Ji W and Guo J D2021 Phys. Rev. B 103 235421
[25] Ohnishi T, Shibuya K, Lippmaa M, Kobayashi D, Kumigashira H, Oshima M and Koinuma H2004 Appl. Phys. Lett. 85 272
[26] Connell J G, Isaac B J, Ekanayake G B, Strachan D R and Seo S S A2012 Appl. Phys. Lett. 101 251607
[27] Lin Y Y, Becerra-Toledo A E, Silly F, Poeppelmeier K R, Castell M R and Marks L D2011 Surf. Sci. 605 L51
[28] Chen J, Dai Y, Ma Y, Dai X, Ho W and Xie M2017 Nanoscale 9 15945

Critical behavior in the epitaxial growth of two-dimensional tellurium films on SrTiO₃ (001) substrates

Critical behavior in the epitaxial growth of two-dimensional tellurium films on SrTiO₃ (001) substrates

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