中国物理B ›› 2023, Vol. 32 ›› Issue (5): 57301-057301.doi: 10.1088/1674-1056/aca396

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Room temperature quantum anomalous Hall insulator in honeycomb lattice, RuCS3, with large magnetic anisotropy energy

Yong-Chun Zhao(赵永春)1, Ming-Xin Zhu(朱铭鑫)1, Sheng-Shi Li(李胜世)2, and Ping Li(李萍)1,†   

  1. 1 School of Physics and Technology, University of Jinan, Jinan 250022, China;
    2 Institute of Spintronics, University of Jinan, Jinan 250022, China
  • 收稿日期:2022-08-05 修回日期:2022-10-22 接受日期:2022-11-17 出版日期:2023-04-21 发布日期:2023-04-28
  • 通讯作者: Ping Li E-mail:ss_lip@ujn.edu.cn
  • 基金资助:
    Project supported by the Natural Science Foundation of Shandong Province, China (Grant No. ZR2019MA041), the Taishan Scholar Project of Shandong Province, China (Grant No. ts20190939), the National Natural Science Foundation of China (Grant No. 62071200), and the Shandong Provincial Natural Science Foundation, China (Grant No. ZR2020QA052).

Room temperature quantum anomalous Hall insulator in honeycomb lattice, RuCS3, with large magnetic anisotropy energy

Yong-Chun Zhao(赵永春)1, Ming-Xin Zhu(朱铭鑫)1, Sheng-Shi Li(李胜世)2, and Ping Li(李萍)1,†   

  1. 1 School of Physics and Technology, University of Jinan, Jinan 250022, China;
    2 Institute of Spintronics, University of Jinan, Jinan 250022, China
  • Received:2022-08-05 Revised:2022-10-22 Accepted:2022-11-17 Online:2023-04-21 Published:2023-04-28
  • Contact: Ping Li E-mail:ss_lip@ujn.edu.cn
  • Supported by:
    Project supported by the Natural Science Foundation of Shandong Province, China (Grant No. ZR2019MA041), the Taishan Scholar Project of Shandong Province, China (Grant No. ts20190939), the National Natural Science Foundation of China (Grant No. 62071200), and the Shandong Provincial Natural Science Foundation, China (Grant No. ZR2020QA052).

摘要: The quantum anomalous Hall (QAH) effect has attracted enormous attention since it can induce topologically protected conducting edge states in an intrinsic insulating material. For practical quantum applications, the main obstacle is the non-existent room temperature QAH systems, especially with both large topological band gap and robust ferromagnetic order. Here, according to first-principles calculations, we predict the realization of the room temperature QAH effect in a two-dimensional (2D) honeycomb lattice, RuCS3 with a non-zero Chern number of C = 1. Especially, the nontrivial topology band gap reaches up to 336 meV for RuCS3. Moreover, we find that RuCS3 has a large magnetic anisotropy energy (2.065 meV) and high Curie temperature (696 K). We further find that the non-trivial topological properties are robust against the biaxial strain. The robust topological and magnetic properties make RuCS3 have great applications in room temperature spintronics and nanoelectronics.

关键词: quantum anomalous Hall (QAH) effect, room temperature, magnetic anisotropy energy, topological properties, first-principles calculations

Abstract: The quantum anomalous Hall (QAH) effect has attracted enormous attention since it can induce topologically protected conducting edge states in an intrinsic insulating material. For practical quantum applications, the main obstacle is the non-existent room temperature QAH systems, especially with both large topological band gap and robust ferromagnetic order. Here, according to first-principles calculations, we predict the realization of the room temperature QAH effect in a two-dimensional (2D) honeycomb lattice, RuCS3 with a non-zero Chern number of C = 1. Especially, the nontrivial topology band gap reaches up to 336 meV for RuCS3. Moreover, we find that RuCS3 has a large magnetic anisotropy energy (2.065 meV) and high Curie temperature (696 K). We further find that the non-trivial topological properties are robust against the biaxial strain. The robust topological and magnetic properties make RuCS3 have great applications in room temperature spintronics and nanoelectronics.

Key words: quantum anomalous Hall (QAH) effect, room temperature, magnetic anisotropy energy, topological properties, first-principles calculations

中图分类号:  (Surface states, band structure, electron density of states)

  • 73.20.At
75.50.Gg (Ferrimagnetics) 75.70.Ak (Magnetic properties of monolayers and thin films)