Skyrmion-based logic gates controlled by electric currents in synthetic antiferromagnet

doi:10.1088/1674-1056/ac9b01

中国物理B ›› 2023, Vol. 32 ›› Issue (1): 17506-017506.doi: 10.1088/1674-1056/ac9b01

Skyrmion-based logic gates controlled by electric currents in synthetic antiferromagnet

Linlin Li(李林霖)¹, Jia Luo(罗佳)¹, Jing Xia(夏静)², Yan Zhou(周艳)³, Xiaoxi Liu(刘小晰)², and Guoping Zhao(赵国平)^1,4,†

1 College of Physics and Electronic Engineering, Sichuan Normal University, Chengdu 610068, China;
2 Department of Electrical and Computer Engineering, Shinshu University, Wakasato 4-17-1, Nagano 380-8553, Japan;
3 School of Science and Engineering, The Chinese University of Hong Kong, Shenzhen 518172, China;
4 Center for Magnetism and Spintronics, Sichuan Normal University, Chengdu 610068, China

收稿日期:2022-07-26 修回日期:2022-09-28 接受日期:2022-10-18 出版日期:2022-12-08 发布日期:2023-01-03
通讯作者: Guoping Zhao E-mail:zhaogp@uestc.edu.cn
基金资助:
Guoping Zhao acknowledges the support from the National Natural Science Foundation of China (Grant Nos. 51771127, 52171188, and 52111530143) and the Central Government Funds of Guiding Local Scientific and Technological Development for Sichuan Province, China (Grant No. 2021ZYD0025). Jing Xia was a JSPS International Research Fellow supported by JSPS KAKENHI (Grant No. JP22F22061). Yan Zhou acknowledges the support from Guangdong Basic and Applied Basic Research Foundation (Grant No. 2021B1515120047), Guangdong Special Support Project (Grant No. 2019BT02X030), Shenzhen Fundamental Research Fund (Grant No. JCYJ20210324120213037), Shenzhen Peacock Group Plan (No. KQTD20180413181702403), Pearl River Recruitment Program of Talents (Grant No. 2017GC010293), and the National Natural Science Foundation of China (Grant Nos. 11974298 and 61961136006). Xiaoxi Liu acknowledges the support from the Grantsin-Aid Scientific Research from JSPS KAKENHI (Grant Nos. JP20F20363, JP21H01364, and JP21K18872).

Skyrmion-based logic gates controlled by electric currents in synthetic antiferromagnet

Linlin Li(李林霖)¹, Jia Luo(罗佳)¹, Jing Xia(夏静)², Yan Zhou(周艳)³, Xiaoxi Liu(刘小晰)², and Guoping Zhao(赵国平)^1,4,†

1 College of Physics and Electronic Engineering, Sichuan Normal University, Chengdu 610068, China;
2 Department of Electrical and Computer Engineering, Shinshu University, Wakasato 4-17-1, Nagano 380-8553, Japan;
3 School of Science and Engineering, The Chinese University of Hong Kong, Shenzhen 518172, China;
4 Center for Magnetism and Spintronics, Sichuan Normal University, Chengdu 610068, China

Received:2022-07-26 Revised:2022-09-28 Accepted:2022-10-18 Online:2022-12-08 Published:2023-01-03
Contact: Guoping Zhao E-mail:zhaogp@uestc.edu.cn
Supported by:
Guoping Zhao acknowledges the support from the National Natural Science Foundation of China (Grant Nos. 51771127, 52171188, and 52111530143) and the Central Government Funds of Guiding Local Scientific and Technological Development for Sichuan Province, China (Grant No. 2021ZYD0025). Jing Xia was a JSPS International Research Fellow supported by JSPS KAKENHI (Grant No. JP22F22061). Yan Zhou acknowledges the support from Guangdong Basic and Applied Basic Research Foundation (Grant No. 2021B1515120047), Guangdong Special Support Project (Grant No. 2019BT02X030), Shenzhen Fundamental Research Fund (Grant No. JCYJ20210324120213037), Shenzhen Peacock Group Plan (No. KQTD20180413181702403), Pearl River Recruitment Program of Talents (Grant No. 2017GC010293), and the National Natural Science Foundation of China (Grant Nos. 11974298 and 61961136006). Xiaoxi Liu acknowledges the support from the Grantsin-Aid Scientific Research from JSPS KAKENHI (Grant Nos. JP20F20363, JP21H01364, and JP21K18872).

1. 附件.zip(8420KB)

摘要/Abstract

摘要： Skyrmions in synthetic antiferromagnetic (SAF) systems have attracted much attention in recent years due to their superior stability, high-speed mobility, and completely compensated skyrmion Hall effect. They are promising building blocks for the next generation of magnetic storage and computing devices with ultra-low energy and ultra-high density. Here, we theoretically investigate the motion of a skyrmion in an SAF bilayer racetrack and find the velocity of a skyrmion can be controlled jointly by the edge effect and the driving force induced by the spin current. Furthermore, we propose a logic gate that can realize different logic functions of logic AND, OR, NOT, NAND, NOR, and XOR gates. Several effects including the spin-orbit torque, the skyrmion Hall effect, skyrmion-skyrmion repulsion, and skyrmion-edge interaction are considered in this design. Our work may provide a way to utilize the SAF skyrmion as a versatile information carrier for future energy-efficient logic gates.

关键词: skyrmions, logic gates, synthetic antiferromagnets, micromagnetic simulation

Abstract: Skyrmions in synthetic antiferromagnetic (SAF) systems have attracted much attention in recent years due to their superior stability, high-speed mobility, and completely compensated skyrmion Hall effect. They are promising building blocks for the next generation of magnetic storage and computing devices with ultra-low energy and ultra-high density. Here, we theoretically investigate the motion of a skyrmion in an SAF bilayer racetrack and find the velocity of a skyrmion can be controlled jointly by the edge effect and the driving force induced by the spin current. Furthermore, we propose a logic gate that can realize different logic functions of logic AND, OR, NOT, NAND, NOR, and XOR gates. Several effects including the spin-orbit torque, the skyrmion Hall effect, skyrmion-skyrmion repulsion, and skyrmion-edge interaction are considered in this design. Our work may provide a way to utilize the SAF skyrmion as a versatile information carrier for future energy-efficient logic gates.

Key words: skyrmions, logic gates, synthetic antiferromagnets, micromagnetic simulation

中图分类号: (Studies of specific magnetic materials)

75.50.-y

75.78.Cd (Micromagnetic simulations ?) 85.70.Ay (Magnetic device characterization, design, and modeling) 12.39.Dc (Skyrmions)

Linlin Li(李林霖), Jia Luo(罗佳), Jing Xia(夏静), Yan Zhou(周艳), Xiaoxi Liu(刘小晰), and Guoping Zhao(赵国平). Skyrmion-based logic gates controlled by electric currents in synthetic antiferromagnet[J]. 中国物理B, 2023, 32(1): 17506-017506.

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Skyrmion-based logic gates controlled by electric currents in synthetic antiferromagnet

Skyrmion-based logic gates controlled by electric currents in synthetic antiferromagnet

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