中国物理B ›› 2022, Vol. 31 ›› Issue (10): 107307-107307.doi: 10.1088/1674-1056/ac8e9f

所属专题： TOPICAL REVIEW — Celebrating 30 Years of Chinese Physics B

• TOPICAL REVIEW—Celebrating 30 Years of Chinese Physics B • 上一篇    下一篇

Recent advances of interface engineering in inverted perovskite solar cells

Shiqi Yu(余诗琪)1,2, Zhuang Xiong(熊壮)1,2, Zhenhan Wang(王振涵)1,2, Haitao Zhou(周海涛)1,2, Fei Ma(马飞)1,2, Zihan Qu(瞿子涵)1,2, Yang Zhao(赵洋)1,2, Xinbo Chu(楚新波)1,2, and Jingbi You(游经碧)1,2,†   

  1. 1. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
    2. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
  • 收稿日期:2022-08-02 修回日期:2022-08-28 出版日期:2022-10-16 发布日期:2022-09-24
  • 通讯作者: Jingbi You E-mail:jyou@semi.ac.cn
  • 基金资助:
    This work was supported by the National Natural Science Foundation of China (Grant No. 61925405) and the National Key Research and Development Program of China (Grant No. 2020YFB1506400).

Recent advances of interface engineering in inverted perovskite solar cells

Shiqi Yu(余诗琪)1,2, Zhuang Xiong(熊壮)1,2, Zhenhan Wang(王振涵)1,2, Haitao Zhou(周海涛)1,2, Fei Ma(马飞)1,2, Zihan Qu(瞿子涵)1,2, Yang Zhao(赵洋)1,2, Xinbo Chu(楚新波)1,2, and Jingbi You(游经碧)1,2,†   

  1. 1. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
    2. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
  • Received:2022-08-02 Revised:2022-08-28 Online:2022-10-16 Published:2022-09-24
  • Contact: Jingbi You E-mail:jyou@semi.ac.cn
  • Supported by:
    This work was supported by the National Natural Science Foundation of China (Grant No. 61925405) and the National Key Research and Development Program of China (Grant No. 2020YFB1506400).

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摘要： Perovskite solar cells (PSCs) have witnessed great achievement in the past decade. Most of previous researches focus on the n—i—p structure of PSCs with ultra-high efficiency. While the n—i—p devices usually used the unstable charge transport layers, such as the hygroscopic doped spiro-OMeTAD, which affect the long-term stability. The inverted device with the p—i—n structure owns better stability when using stable undoped organic molecular or metal oxide materials. There are significant progresses in inverted PSCs, most of them related to charge transport or interface engineering. In this review, we will mainly summarize the inverted PSCs progresses related to the interface engineering. After that, we prospect the future direction on inverted PSCs.

关键词: inverted perovskite solar cells, charge transport layer, interface modification, defect passivation

Abstract: Perovskite solar cells (PSCs) have witnessed great achievement in the past decade. Most of previous researches focus on the n—i—p structure of PSCs with ultra-high efficiency. While the n—i—p devices usually used the unstable charge transport layers, such as the hygroscopic doped spiro-OMeTAD, which affect the long-term stability. The inverted device with the p—i—n structure owns better stability when using stable undoped organic molecular or metal oxide materials. There are significant progresses in inverted PSCs, most of them related to charge transport or interface engineering. In this review, we will mainly summarize the inverted PSCs progresses related to the interface engineering. After that, we prospect the future direction on inverted PSCs.

Key words: inverted perovskite solar cells, charge transport layer, interface modification, defect passivation

中图分类号:  (Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

  • 73.40.Lq
68.65.-k (Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties) 68.35.-p (Solid surfaces and solid-solid interfaces: structure and energetics) 81.05.Hd (Other semiconductors)