中国物理B ›› 2022, Vol. 31 ›› Issue (9): 98507-098507.doi: 10.1088/1674-1056/ac7455

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Quantum oscillations in a hexagonal boron nitride-supported single crystalline InSb nanosheet

Li Zhang(张力)1, Dong Pan(潘东)2, Yuanjie Chen(陈元杰)1, Jianhua Zhao(赵建华)2, and Hongqi Xu(徐洪起)1,3,†   

  1. 1 Beijing Key Laboratory of Quantum Devices, Key Laboratory for the Physics and Chemistry of Nanodevices and School of Electronics, Peking University, Beijing 100871, China;
    2 State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
    3 Beijing Academy of Quantum Information Sciences, Beijing 100193, China
  • 收稿日期:2022-04-05 修回日期:2022-05-20 接受日期:2022-05-29 出版日期:2022-08-19 发布日期:2022-08-30
  • 通讯作者: Hongqi Xu E-mail:hqxu@pku.edu.cn
  • 基金资助:
    Project supported by National Key Research and Development Program of China (Grant Nos. 2017YFA0303304 and 2016YFA0300601), the National Natural Science Foundation of China (Grant Nos. 92165208, 92065106, 61974138, 11874071, 91221202, and 91421303), and the Beijing Academy of Quantum Information Sciences (Grant No. Y18G22). Dong Pan also acknowledges the support from the Youth Innovation Promotion Association, Chinese Academy of Sciences (Grant Nos. 2017156 and Y2021043).

Quantum oscillations in a hexagonal boron nitride-supported single crystalline InSb nanosheet

Li Zhang(张力)1, Dong Pan(潘东)2, Yuanjie Chen(陈元杰)1, Jianhua Zhao(赵建华)2, and Hongqi Xu(徐洪起)1,3,†   

  1. 1 Beijing Key Laboratory of Quantum Devices, Key Laboratory for the Physics and Chemistry of Nanodevices and School of Electronics, Peking University, Beijing 100871, China;
    2 State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
    3 Beijing Academy of Quantum Information Sciences, Beijing 100193, China
  • Received:2022-04-05 Revised:2022-05-20 Accepted:2022-05-29 Online:2022-08-19 Published:2022-08-30
  • Contact: Hongqi Xu E-mail:hqxu@pku.edu.cn
  • Supported by:
    Project supported by National Key Research and Development Program of China (Grant Nos. 2017YFA0303304 and 2016YFA0300601), the National Natural Science Foundation of China (Grant Nos. 92165208, 92065106, 61974138, 11874071, 91221202, and 91421303), and the Beijing Academy of Quantum Information Sciences (Grant No. Y18G22). Dong Pan also acknowledges the support from the Youth Innovation Promotion Association, Chinese Academy of Sciences (Grant Nos. 2017156 and Y2021043).

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摘要： A gated Hall-bar device is made from an epitaxially grown, free-standing InSb nanosheet on a hexagonal boron nitride (hBN) dielectric/graphite gate structure and the electron transport properties in the InSb nanosheet are studied by gate-transfer characteristic and magnetotransport measurements at low temperatures. The measurements show that the carriers in the InSb nanosheet are of electrons and the carrier density in the nanosheet can be highly efficiently tuned by the graphite gate. The mobility of the electrons in the InSb nanosheet is extracted from low-field magneotransport measurements and a value of the mobility exceeding $\sim 1.8\times10^4$ cm$^{2}\cdot$V$^{-1}\cdot$s$^{-1}$ is found. High-field magentotransport measurements show well-defined Shubnikov-de Haas (SdH) oscillations in the longitudinal resistance of the InSb nanosheet. Temperature-dependent measurements of the SdH oscillations are carried out and key transport parameters, including the electron effective mass $m^{\ast }\sim 0.028 m_{0}$ and the quantum lifetime $\tau \sim 0.046 $ ps, in the InSb nanosheet are extracted. It is for the first time that such experimental measurements have been reported for a free-standing InSb nanosheet and the results obtained indicate that InSb nanosheet/hBN/graphite gate structures can be used to develop advanced quantum devices for novel physics studies and for quantum technology applications.

关键词: InSb nanosheet, Shubnikov-de Haas (SdH) oscillations, electron effective mass, quantum lifetime

Abstract: A gated Hall-bar device is made from an epitaxially grown, free-standing InSb nanosheet on a hexagonal boron nitride (hBN) dielectric/graphite gate structure and the electron transport properties in the InSb nanosheet are studied by gate-transfer characteristic and magnetotransport measurements at low temperatures. The measurements show that the carriers in the InSb nanosheet are of electrons and the carrier density in the nanosheet can be highly efficiently tuned by the graphite gate. The mobility of the electrons in the InSb nanosheet is extracted from low-field magneotransport measurements and a value of the mobility exceeding $\sim 1.8\times10^4$ cm$^{2}\cdot$V$^{-1}\cdot$s$^{-1}$ is found. High-field magentotransport measurements show well-defined Shubnikov-de Haas (SdH) oscillations in the longitudinal resistance of the InSb nanosheet. Temperature-dependent measurements of the SdH oscillations are carried out and key transport parameters, including the electron effective mass $m^{\ast }\sim 0.028 m_{0}$ and the quantum lifetime $\tau \sim 0.046 $ ps, in the InSb nanosheet are extracted. It is for the first time that such experimental measurements have been reported for a free-standing InSb nanosheet and the results obtained indicate that InSb nanosheet/hBN/graphite gate structures can be used to develop advanced quantum devices for novel physics studies and for quantum technology applications.

Key words: InSb nanosheet, Shubnikov-de Haas (SdH) oscillations, electron effective mass, quantum lifetime

中图分类号:  (Quantum well devices (quantum dots, quantum wires, etc.))

  • 85.35.Be
73.63.-b (Electronic transport in nanoscale materials and structures) 73.50.Jt (Galvanomagnetic and other magnetotransport effects)