中国物理B ›› 2022, Vol. 31 ›› Issue (8): 86103-086103.doi: 10.1088/1674-1056/ac657d

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Synthesis of hexagonal boron nitride films by dual temperature zone low-pressure chemical vapor deposition

Zhi-Fu Zhu(朱志甫)1,2, Shao-Tang Wang(王少堂)2, Ji-Jun Zou(邹继军)2,†, He Huang(黄河)2, Zhi-Jia Sun(孙志嘉)3, Qing-Lei Xiu(修青磊)3, Zhong-Ming Zhang(张忠铭)4, Xiu-Ping Yue(岳秀萍)2, Yang Zhang(张洋)1, Jin-Hui Qu(瞿金辉)2, and Yong Gan(甘勇)1   

  1. 1 School of Information Engineering, Zhengzhou University of Technology, Zhengzhou 450044, China;
    2 Engineering Research Center of Nuclear Technology Application(East China University of Technology), Ministry of Education, Nanchang 330013, China;
    3 State Key Laboratory of Particle Detection and Electronics, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China;
    4 Engineering Department, Lancaster University, Lancaster, LA14 YW, United Kingdom
  • 收稿日期:2022-02-16 修回日期:2022-04-01 接受日期:2022-04-08 出版日期:2022-07-18 发布日期:2022-07-29
  • 通讯作者: Ji-Jun Zou E-mail:jjzou@ecit.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 61964001), the Key Research and Development Program of Jiangxi Province, China (Grant No. 20212BBG73012), the Natural Science Foundation of Jiangxi Province, China (Grant No. 20192BAB207033), the Key Scientific Research Projects of Henan Higher Education Institutions, China (Grant No. 22A490001), the State Key Laboratory of Particle Detection and Electronics, China (Grant No. SKLPDE-KF-2019), and the Foundation of Engineering Research Center of Nuclear Technology Application (East China Institute of Technology) (Grant No. HJSJYB2021-4).

Synthesis of hexagonal boron nitride films by dual temperature zone low-pressure chemical vapor deposition

Zhi-Fu Zhu(朱志甫)1,2, Shao-Tang Wang(王少堂)2, Ji-Jun Zou(邹继军)2,†, He Huang(黄河)2, Zhi-Jia Sun(孙志嘉)3, Qing-Lei Xiu(修青磊)3, Zhong-Ming Zhang(张忠铭)4, Xiu-Ping Yue(岳秀萍)2, Yang Zhang(张洋)1, Jin-Hui Qu(瞿金辉)2, and Yong Gan(甘勇)1   

  1. 1 School of Information Engineering, Zhengzhou University of Technology, Zhengzhou 450044, China;
    2 Engineering Research Center of Nuclear Technology Application(East China University of Technology), Ministry of Education, Nanchang 330013, China;
    3 State Key Laboratory of Particle Detection and Electronics, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China;
    4 Engineering Department, Lancaster University, Lancaster, LA14 YW, United Kingdom
  • Received:2022-02-16 Revised:2022-04-01 Accepted:2022-04-08 Online:2022-07-18 Published:2022-07-29
  • Contact: Ji-Jun Zou E-mail:jjzou@ecit.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 61964001), the Key Research and Development Program of Jiangxi Province, China (Grant No. 20212BBG73012), the Natural Science Foundation of Jiangxi Province, China (Grant No. 20192BAB207033), the Key Scientific Research Projects of Henan Higher Education Institutions, China (Grant No. 22A490001), the State Key Laboratory of Particle Detection and Electronics, China (Grant No. SKLPDE-KF-2019), and the Foundation of Engineering Research Center of Nuclear Technology Application (East China Institute of Technology) (Grant No. HJSJYB2021-4).

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摘要： Hexagonal boron nitride (h-BN) films are synthesized by dual temperature zone low-pressure chemical vapor deposition (LPCVD) through using a single ammonia borane precursor on non-catalytic c-plane Al2O3 substrates. The grown films are confirmed to be h-BN films by various characterization methods. Meanwhile, the growth rates and crystal quality of h-BN films at different positions in the dual temperature zone are studied. It is found that the growth rates and crystal quality of the h-BN films at different positions on the substrate are significantly different. The growth rates of the h-BN thin films show their decreasing trends with the rearward position, while the crystal quality is improved. This work provides an experimental basis for the preparation of large area wafer thick h-BN films by LPCVD.

关键词: ammonia borane, dehydrogenation, h-BN, dual temperature zone

Abstract: Hexagonal boron nitride (h-BN) films are synthesized by dual temperature zone low-pressure chemical vapor deposition (LPCVD) through using a single ammonia borane precursor on non-catalytic c-plane Al2O3 substrates. The grown films are confirmed to be h-BN films by various characterization methods. Meanwhile, the growth rates and crystal quality of h-BN films at different positions in the dual temperature zone are studied. It is found that the growth rates and crystal quality of the h-BN films at different positions on the substrate are significantly different. The growth rates of the h-BN thin films show their decreasing trends with the rearward position, while the crystal quality is improved. This work provides an experimental basis for the preparation of large area wafer thick h-BN films by LPCVD.

Key words: ammonia borane, dehydrogenation, h-BN, dual temperature zone

中图分类号:  (Structure of bulk crystals)

  • 61.50.-f
81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)) 71.20.Nr (Semiconductor compounds)