Interfaces between MoOx and MoX2 (X = S, Se, and Te)

doi:10.1088/1674-1056/abb310

中国物理B ›› 2020, Vol. 29 ›› Issue (11): 116802-.doi: 10.1088/1674-1056/abb310

Fengming Chen(陈凤鸣)¹, Jinxin Liu(刘金鑫)¹, Xiaoming Zheng(郑晓明)¹, Longhui Liu(刘龙慧)¹, Haipeng Xie(谢海鹏)¹, Fei Song(宋飞)², Yongli Gao(高永立)³^,¹, Han Huang(黄寒)¹^,†()

收稿日期:2020-07-08 修回日期:2020-08-10 接受日期:2020-08-27 出版日期:2020-11-05 发布日期:2020-11-03

Interfaces between MoO_x and MoX₂ (X = S, Se, and Te)

Fengming Chen(陈凤鸣)¹, Jinxin Liu(刘金鑫)¹, Xiaoming Zheng(郑晓明)¹, Longhui Liu(刘龙慧)¹, Haipeng Xie(谢海鹏)¹, Fei Song(宋飞)², Yongli Gao(高永立)^3,1, and Han Huang(黄寒)^{1, †}

1 Hunan Key Laboratory of Super-microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha 410083, China
2 Shanghai Synchrotron Radiation Facility, Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201204, China
3 Department of Physics and Astronomy, University of Rochester, Rochester, NY 14627, USA

Received:2020-07-08 Revised:2020-08-10 Accepted:2020-08-27 Online:2020-11-05 Published:2020-11-03
Contact: ^†Corresponding author. E-mail: physhh@csu.edu.cn
Supported by:
the National Natural Science Foundation of China (Grant No. 11874427), the National Science Foundation DMR-1903962, and the Fundamental Research Funds for the Central Universities of Central South University (Grant No. 2019zzts429).

摘要/Abstract

Abstract:

In the past decades there have been many breakthroughs in low-dimensional materials, especially in two-dimensional (2D) atomically thin crystals like graphene. As structural analogues of graphene but with a sizeable band gap, monolayers of atomically thin transition metal dichalcogenides (with formula of MX₂, M = Mo, W; X = S, Se, Te, etc.) have emerged as the ideal 2D prototypes for exploring fundamentals in physics such as valleytronics due to the quantum confinement effects, and for engineering a wide range of nanoelectronic, optoelectronic, and photocatalytic applications. Transition metal trioxides as promising materials with low evaporation temperature, high work function, and inertness to air have been widely used in the fabrication and modification of MX₂. In this review, we reported the fabrications of one-dimensional MoS₂ wrapped MoO₂ single crystals with varied crystal direction via atmospheric pressure chemical vapor deposition method and of 2D MoO_x covered MoX₂ by means of exposing MoX₂ to ultraviolet ozone. The prototype devices show good performances. The approaches are common to other transition metal dichalcogenides and transition metal oxides.

Key words: MoO_x, epitaxial relationships, MoX₂, layer-by-layer oxidation

Fengming Chen(陈凤鸣), Jinxin Liu(刘金鑫), Xiaoming Zheng(郑晓明), Longhui Liu(刘龙慧), Haipeng Xie(谢海鹏), Fei Song(宋飞), Yongli Gao(高永立), Han Huang(黄寒). [J]. 中国物理B, 2020, 29(11): 116802-.

Fengming Chen(陈凤鸣), Jinxin Liu(刘金鑫), Xiaoming Zheng(郑晓明), Longhui Liu(刘龙慧), Haipeng Xie(谢海鹏), Fei Song(宋飞), Yongli Gao(高永立), and Han Huang(黄寒). Interfaces between MoO_x and MoX₂ (X = S, Se, and Te)[J]. Chin. Phys. B, 2020, 29(11): 116802-.

图/表 12

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Interfaces between MoO_x and MoX₂ (X = S, Se, and Te)

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