中国物理B ›› 2020, Vol. 29 ›› Issue (10): 107501-.doi: 10.1088/1674-1056/ab99ac

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Shan Li(黎姗)1,2, Jun Lu(鲁军)1,3,†(), Si-Wei Mao(毛思玮)1,2, Da-Hai Wei(魏大海)1,2,3, Jian-Hua Zhao(赵建华)1,2,3   

  • 收稿日期:2020-02-14 修回日期:2020-05-26 接受日期:2020-06-05 出版日期:2020-10-05 发布日期:2020-10-05
  • 通讯作者: Jun Lu(鲁军)

Magnetic characterization of a thin Co2MnSi/L10–MnGa synthetic antiferromagnetic bilayer prepared by MBE

Shan Li(黎姗)1,2, Jun Lu(鲁军)1,3,†, Si-Wei Mao(毛思玮)1,2, Da-Hai Wei(魏大海)1,2,3, and Jian-Hua Zhao(赵建华)1,2,3   

  1. 1 State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences (CAS), Beijing 100083, China
    2 Center of Materials Science and Optoelectronics Engineering & CAS Center of Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100190, China
    3 Beijing Academy of Quantum Information Science, Beijing 100193, China
  • Received:2020-02-14 Revised:2020-05-26 Accepted:2020-06-05 Online:2020-10-05 Published:2020-10-05
  • Contact: Corresponding author. E-mail: lujun@semi.ac.cn
  • About author:
    †Corresponding author. E-mail: lujun@semi.ac.cn
    * Project supported by the National Program on Key Basic Research Project, China (Grant No. 2018YFB0407601), the Key Research Project of Frontier Science of the Chinese Academy of Sciences (Grant Nos. QYZDY-SSW-JSC015 and XDPB12), and the National Natural Science Foundation of China (Grant Nos. 11874349 and 11774339).

Abstract:

A synthetic antiferromagnet based on a thin antiferromagnetically coupled Co2MnSi/MnGa bilayer with Pt capping is proposed in this work. Square magnetic loops measured by anomalous Hall effect reveal that a well perpendicular magnetic anisotropy is obtained in this structure. A very large coercivity of 83 kOe (1 Oe = 79.5775 A⋅m−1) is observed near the magnetic moment compensation point of 270 K, indicating an antiferromagnetic behavior. Moreover, the anomalous Hall signal does not go to zero even at the magnetic compensation point, for which the difficulty in detecting the conventional antiferromagnets can be overcome. By changing the temperature, the polarity of the spin–orbit torque induced switching is changed around the bilayer compensation point. This kind of thin bilayer has potential applications in spin–orbit-related effects, spintronic devices, and racetrack memories.

Key words: exchange coupling, magnetization compensation, anomalous Hall effect, molecular-beam epitaxy

中图分类号:  (Exchange and superexchange interactions)

  • 75.30.Et
75.70.Ak (Magnetic properties of monolayers and thin films) 73.50.Jt (Galvanomagnetic and other magnetotransport effects) 81.15.Hi (Molecular, atomic, ion, and chemical beam epitaxy)