Optimization of terahertz monolithic integrated frequency multiplier based on trap-assisted physics model of THz Schottky barrier varactor

doi:10.1088/1674-1056/abab74

中国物理B ›› 2020, Vol. 29 ›› Issue (10): 104212-.doi: 10.1088/1674-1056/abab74

Lu-Wei Qi(祁路伟)¹^,²^,³, Jin Meng(孟进)², Xiao-Yu Liu(刘晓宇)¹, Yi Weng(翁祎)¹, Zhi-Cheng Liu(刘志成)¹, De-Hai Zhang(张德海)²^,†(), Jing-Tao Zhou(周静涛)¹^,‡(), Zhi Jin(金智)¹

收稿日期:2020-04-14 修回日期:2020-06-03 接受日期:2020-08-01 出版日期:2020-10-05 发布日期:2020-10-05
通讯作者: De-Hai Zhang(张德海), Jing-Tao Zhou(周静涛)

Optimization of terahertz monolithic integrated frequency multiplier based on trap-assisted physics model of THz Schottky barrier varactor

Lu-Wei Qi(祁路伟)^1,2,3, Jin Meng(孟进)², Xiao-Yu Liu(刘晓宇)¹, Yi Weng(翁祎)¹, Zhi-Cheng Liu(刘志成)¹, De-Hai Zhang(张德海)^2,†, Jing-Tao Zhou(周静涛)^1,‡, and Zhi Jin(金智)¹

¹ Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China
² National Space Science Center, the Chinese Academy of Sciences, Beijing 100190, China
³ University of Chinese Academy of Sciences, Beijing 100190, China

Received:2020-04-14 Revised:2020-06-03 Accepted:2020-08-01 Online:2020-10-05 Published:2020-10-05
Contact: ^†Corresponding author. E-mail: zhangdehai@mirslab.cn第一通讯作者 ^‡Corresponding author. E-mail: zhoujingtao@ime.ac.cn

摘要/Abstract

Abstract:

The optimization of high power terahertz monolithic integrated circuit (TMIC) is systemically studied based on the physical model of the Schottky barrier varactor (SBV) with interface defects and tunneling effect. An ultra-thin dielectric layer is added to describe the extra tunneling effect and the damping of thermionic emission current induced by the interface defects. Power consumption of the dielectric layer results in the decrease of capacitance modulation ration (C_max/C_min), and thus leads to poor nonlinear C–V characteristics. The proposed Schottky metal-brim (SMB) terminal structure could improve the capacitance modulation ration by reducing the influence of the interface charge and eliminating the fringing capacitance effect. Finally, a 215 GHz tripler TMIC is fabricated based on the SMB terminal structure. The output power is above 5 mW at 210–218 GHz and the maximum could exceed 10 mW at 216 GHz, which could be widely used in terahertz imaging, radiometers, and so on. This paper also provides theoretical support for the SMB structure to optimize the TMIC performance.

Key words: C-V characteristic, physics-based model, terahertz monolithic integrated circuit (TMIC), Schottky barrier varactor

中图分类号: (Frequency conversion; harmonic generation, including higher-order harmonic generation)

42.65.Ky

73.61.Ey (III-V semiconductors) 85.30.De (Semiconductor-device characterization, design, and modeling) 85.30.Kk (Junction diodes)

Lu-Wei Qi(祁路伟), Jin Meng(孟进), Xiao-Yu Liu(刘晓宇), Yi Weng(翁祎), Zhi-Cheng Liu(刘志成), De-Hai Zhang(张德海), Jing-Tao Zhou(周静涛), Zhi Jin(金智). [J]. 中国物理B, 2020, 29(10): 104212-.

Lu-Wei Qi(祁路伟), Jin Meng(孟进), Xiao-Yu Liu(刘晓宇), Yi Weng(翁祎), Zhi-Cheng Liu(刘志成), De-Hai Zhang(张德海)†, Jing-Tao Zhou(周静涛)‡, and Zhi Jin(金智). Optimization of terahertz monolithic integrated frequency multiplier based on trap-assisted physics model of THz Schottky barrier varactor[J]. Chin. Phys. B, 2020, 29(10): 104212-.

图/表 11

参考文献 30

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Parameter	Value
Dielectric-layer thickness δ/nm	0.256
Interface acceptor density D_it/cm²⋅eV	2.7 × 10¹²
Dielectric constant^[21]	4.0
Capacitance ideal coefficient η	0.7
Correction term D₁	0.36

References	Technology	Frequency/GHz	Max output power/mW	Efficiency
UESTC^[27]	Tripler TMIC	330–500	0.19	2%(max)
ICET^[28]	Membrane tripler TMIC	430	0.215	4.3%(max)
VDI^[29]	Tripler TMIC	140–220	–	3%(typical)
CETC^[30]	Tripler TMIC	325–500	0.45	4.4%(max)
This paper	SMB-structure tripler TMIC	215	10.2	4.5%(max)

Optimization of terahertz monolithic integrated frequency multiplier based on trap-assisted physics model of THz Schottky barrier varactor

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