中国物理B ›› 2020, Vol. 29 ›› Issue (5): 58801-058801.doi: 10.1088/1674-1056/ab8220

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Current improvement in substrate structured Sb2S3 solar cells with MoSe2 interlayer

Lu Liu(刘璐), Sheng-Li Zhang(张生利), Jian-Yu Wu(吴建宇), Wei-Huang Wang(王伟煌), Wei Liu(刘玮), Li Wu(武莉), Yi Zhang(张毅)   

  1. 1 Institute of Photoelectronic Thin Film Devices and Technology and Tianjin Key Laboratory of Thin Film Devices and Technology, Nankai University, Tianjin 300350, China;
    2 School of Physical Science, Nankai University, Tianjin 300071, China
  • 收稿日期:2019-03-12 修回日期:2020-03-20 出版日期:2020-05-05 发布日期:2020-05-05
  • 通讯作者: Sheng-Li Zhang, Yi Zhang E-mail:yizhang@nankai.edu.cn;shenglizhang@nankai.edu.cn
  • 基金资助:
    Project supported by the National Key R&D Program of China (Grant Nos. 2019YFB1503500, 2018YFE0203400, and 2018YFB1500200), the National Natural Science Foundation of China (Grant No. U1902218), the YangFan Innovative and Entrepreneurial Research Team Project of China (Grant No. 2014YT02N037), and the 111 Project, China (Grant No. B16027).

Current improvement in substrate structured Sb2S3 solar cells with MoSe2 interlayer

Lu Liu(刘璐)1, Sheng-Li Zhang(张生利)1, Jian-Yu Wu(吴建宇)1, Wei-Huang Wang(王伟煌)1, Wei Liu(刘玮)1, Li Wu(武莉)2, Yi Zhang(张毅)1   

  1. 1 Institute of Photoelectronic Thin Film Devices and Technology and Tianjin Key Laboratory of Thin Film Devices and Technology, Nankai University, Tianjin 300350, China;
    2 School of Physical Science, Nankai University, Tianjin 300071, China
  • Received:2019-03-12 Revised:2020-03-20 Online:2020-05-05 Published:2020-05-05
  • Contact: Sheng-Li Zhang, Yi Zhang E-mail:yizhang@nankai.edu.cn;shenglizhang@nankai.edu.cn
  • Supported by:
    Project supported by the National Key R&D Program of China (Grant Nos. 2019YFB1503500, 2018YFE0203400, and 2018YFB1500200), the National Natural Science Foundation of China (Grant No. U1902218), the YangFan Innovative and Entrepreneurial Research Team Project of China (Grant No. 2014YT02N037), and the 111 Project, China (Grant No. B16027).

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摘要： Sb2S3 solar cells with substrate structure usually suffer from pretty low short circuit current (JSC) due to the defects and poor carrier transport. The Sb2S3, as a one-dimensional material, exhibits orientation-dependent carrier transport property. In this work, a thin MoSe2 layer is directly synthesized on the Mo substrate followed by depositing the Sb2S3 thin film. The x-ray diffraction (XRD) patterns confirm that a thin MoSe2 layer can improve the crystallization of the Sb2S3 film and induce (hk1) orientations, which can provide more carrier transport channels. Kelvin probe force microscopy (KPFM) results suggest that this modified Sb2S3 film has a benign surface with less defects and dangling bonds. The variation of the surface potential of Sb2S3 indicates a much more efficient carrier separation. Consequently, the power conversion efficiency (PCE) of the substrate structured Sb2S3 thin film solar cell is improved from 1.36% to 1.86%, which is the best efficiency of the substrate structured Sb2S3 thin film solar cell, and JSC significantly increases to 13.6 mA/cm2. According to the external quantum efficiency (EQE) and C-V measurements, the modified crystallization and elevated built-in electric field are the main causes.

关键词: Sb2S3 thin film, super thin MoSe2, built-in electric filed, Kelvin probe force microscopy

Abstract: Sb2S3 solar cells with substrate structure usually suffer from pretty low short circuit current (JSC) due to the defects and poor carrier transport. The Sb2S3, as a one-dimensional material, exhibits orientation-dependent carrier transport property. In this work, a thin MoSe2 layer is directly synthesized on the Mo substrate followed by depositing the Sb2S3 thin film. The x-ray diffraction (XRD) patterns confirm that a thin MoSe2 layer can improve the crystallization of the Sb2S3 film and induce (hk1) orientations, which can provide more carrier transport channels. Kelvin probe force microscopy (KPFM) results suggest that this modified Sb2S3 film has a benign surface with less defects and dangling bonds. The variation of the surface potential of Sb2S3 indicates a much more efficient carrier separation. Consequently, the power conversion efficiency (PCE) of the substrate structured Sb2S3 thin film solar cell is improved from 1.36% to 1.86%, which is the best efficiency of the substrate structured Sb2S3 thin film solar cell, and JSC significantly increases to 13.6 mA/cm2. According to the external quantum efficiency (EQE) and C-V measurements, the modified crystallization and elevated built-in electric field are the main causes.

Key words: Sb2S3 thin film, super thin MoSe2, built-in electric filed, Kelvin probe force microscopy

中图分类号:  (Solar cells (photovoltaics))

  • 88.40.H-
88.40.hj (Efficiency and performance of solar cells)