中国物理B ›› 2019, Vol. 28 ›› Issue (9): 94208-094208.doi: 10.1088/1674-1056/ab3446

所属专题: TOPICAL REVIEW — Strong-field atomic and molecular physics

• TOPICAL REVIEW-Strong-field atomic and molecular physics • 上一篇    下一篇

Influence of intraband motion on the interband excitation and high harmonic generation

Rui-Xin Zuo(左瑞欣), Xiao-Hong Song(宋晓红), Xi-Wang Liu(刘希望), Shi-Dong Yang(杨士栋), Wei-Feng Yang(杨玮枫)   

  1. 1 Research Center for Advanced Optics and Photoelectronics, Department of Physics, College of Science, Shantou University, Shantou 515063, China;
    2 Department of Mathematics, College of Science, Shantou University, Shantou 515063, China;
    3 Key Laboratory of Intelligent Manufacturing Technology(Shantou University), Ministry of Education, Shantou 515063, China
  • 收稿日期:2019-05-20 修回日期:2019-06-18 出版日期:2019-09-05 发布日期:2019-09-05
  • 通讯作者: Wei-Feng Yang E-mail:wfyang@stu.edu.cn
  • 基金资助:

    Project supported by the National Natural Science Foundation of China (Grant Nos. 11674209 and 11774215), the High Level University Projects of Guangdong Province of China (Mathematics, Shantou University), and the Open Fund of the State Key Laboratory of High Field Laser Physics (SIOM), China. WFY and XHS acknowledge support of the Department of Education of Guangdong Province, China (Grant No. 2018KCXTD011).

Influence of intraband motion on the interband excitation and high harmonic generation

Rui-Xin Zuo(左瑞欣)1,2, Xiao-Hong Song(宋晓红)1,2,3, Xi-Wang Liu(刘希望)1,2, Shi-Dong Yang(杨士栋)1, Wei-Feng Yang(杨玮枫)1,2,3   

  1. 1 Research Center for Advanced Optics and Photoelectronics, Department of Physics, College of Science, Shantou University, Shantou 515063, China;
    2 Department of Mathematics, College of Science, Shantou University, Shantou 515063, China;
    3 Key Laboratory of Intelligent Manufacturing Technology(Shantou University), Ministry of Education, Shantou 515063, China
  • Received:2019-05-20 Revised:2019-06-18 Online:2019-09-05 Published:2019-09-05
  • Contact: Wei-Feng Yang E-mail:wfyang@stu.edu.cn
  • Supported by:

    Project supported by the National Natural Science Foundation of China (Grant Nos. 11674209 and 11774215), the High Level University Projects of Guangdong Province of China (Mathematics, Shantou University), and the Open Fund of the State Key Laboratory of High Field Laser Physics (SIOM), China. WFY and XHS acknowledge support of the Department of Education of Guangdong Province, China (Grant No. 2018KCXTD011).

摘要:

Tunnelling, acceleration, and collision of electrons are the basic events in the process of high harmonic generation (HHG) in strong-field interaction with atoms. However, the periodic array of atoms in semiconductor structure makes three steps become interatomic coherent process which leads to complicated carrier dynamics and two sources of high harmonic emission:interband polarization and intraband current. The difference of features of high harmonic generation between semiconductors and atoms is strongly linked to the unique presence of intraband motion which manifests itself a nontrivial role in intertwined two dynamics. Here, we review recent experimental and theoretical advances of understanding coupled interband and intraband mechanisms of HHG in semiconductors. Particularly we focus on the influence of intraband motion on the interband excitation, and on the subsequent HHG emission and attosecond pulse generation.

关键词: high harmonic generation, interband polarization, intraband current, attosecond pulse generation

Abstract:

Tunnelling, acceleration, and collision of electrons are the basic events in the process of high harmonic generation (HHG) in strong-field interaction with atoms. However, the periodic array of atoms in semiconductor structure makes three steps become interatomic coherent process which leads to complicated carrier dynamics and two sources of high harmonic emission:interband polarization and intraband current. The difference of features of high harmonic generation between semiconductors and atoms is strongly linked to the unique presence of intraband motion which manifests itself a nontrivial role in intertwined two dynamics. Here, we review recent experimental and theoretical advances of understanding coupled interband and intraband mechanisms of HHG in semiconductors. Particularly we focus on the influence of intraband motion on the interband excitation, and on the subsequent HHG emission and attosecond pulse generation.

Key words: high harmonic generation, interband polarization, intraband current, attosecond pulse generation

中图分类号:  (Frequency conversion; harmonic generation, including higher-order harmonic generation)

  • 42.65.Ky
42.65.Re (Ultrafast processes; optical pulse generation and pulse compression) 72.20.Ht (High-field and nonlinear effects)