中国物理B ›› 2018, Vol. 27 ›› Issue (6): 66201-066201.doi: 10.1088/1674-1056/27/6/066201
• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇 下一篇
Pressure-induced enhancement of optoelectronic properties in PtS2
Yi-Fang Yuan(袁亦方), Zhi-Tao Zhang(张志涛), Wei-Ke Wang(王伟科), Yong-Hui Zhou(周永惠), Xu-Liang Chen(陈绪亮), Chao An(安超), Ran-Ran Zhang(张冉冉), Ying Zhou(周颖), Chuan-Chuan Gu(顾川川), Liang Li(李亮), Xin-Jian Li(李新建), Zhao-Rong Yang(杨昭荣)
- 1 Department of Physics and Laboratory of Material Physics, Zhengzhou University, Zhengzhou 450052, China;
2 Anhui Provincial Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, China;
3 Synergetic Innovation Center for Quantum Effects and Application, Key Laboratory of Low-dimensional Quantum Structures and Quantum Control of Ministry of Education, College of Physics and Information Science, Hunan Normal University, Changsha 410081, China;
4 State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology(HUST), Wuhan 430074, China;
5 Institute of Physical Science and Information Technology, Anhui University, Hefei 230601, China
Pressure-induced enhancement of optoelectronic properties in PtS2
Yi-Fang Yuan(袁亦方)1,2, Zhi-Tao Zhang(张志涛)2, Wei-Ke Wang(王伟科)3, Yong-Hui Zhou(周永惠)2, Xu-Liang Chen(陈绪亮)2, Chao An(安超)2, Ran-Ran Zhang(张冉冉)2, Ying Zhou(周颖)2, Chuan-Chuan Gu(顾川川)2, Liang Li(李亮)4, Xin-Jian Li(李新建)1, Zhao-Rong Yang(杨昭荣)2,5
- 1 Department of Physics and Laboratory of Material Physics, Zhengzhou University, Zhengzhou 450052, China;
2 Anhui Provincial Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, China;
3 Synergetic Innovation Center for Quantum Effects and Application, Key Laboratory of Low-dimensional Quantum Structures and Quantum Control of Ministry of Education, College of Physics and Information Science, Hunan Normal University, Changsha 410081, China;
4 State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology(HUST), Wuhan 430074, China;
5 Institute of Physical Science and Information Technology, Anhui University, Hefei 230601, China
摘要：
PtS2, which is one of the group-10 transition metal dichalcogenides, attracts increasing attention due to its extraordinary properties under external modulations as predicted by theory, such as tunable bandgap and indirect-to-direct gap transition under strain; however, these properties have not been verified experimentally. Here we report the first experimental exploration of its optoelectronic properties under external pressure. We find that the photocurrent is weakly pressure-dependent below 3 GPa but increases significantly in the pressure range of 3 GPa-4 GPa, with a maximum~6 times higher than that at ambient pressure. X-ray diffraction data shows that no structural phase transition can be observed up to 26.8 GPa, which indicates a stable lattice structure of PtS2 under high pressure. This is further supported by our Raman measurements with an observation of linear blue-shifts of the two Raman-active modes to 6.4 GPa. The pressure-enhanced photocurrent is related to the indirect-to-direct/quasi-direct bandgap transition under pressure, resembling the gap behavior under compression strain as predicted theoretically.
中图分类号: (High-pressure effects in solids and liquids)
- 62.50.-p