Degradation of current-voltage and low frequency noise characteristics under negative bias illumination stress in InZnO thin film transistors

doi:10.1088/1674-1056/27/6/068504

中国物理B ›› 2018, Vol. 27 ›› Issue (6): 68504-068504.doi: 10.1088/1674-1056/27/6/068504

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Degradation of current-voltage and low frequency noise characteristics under negative bias illumination stress in InZnO thin film transistors

Li Wang(王黎), Yuan Liu(刘远), Kui-Wei Geng(耿魁伟), Ya-Yi Chen(陈雅怡), Yun-Fei En(恩云飞)

1 School of Electronic and Information Engineering, South China University of Technology, Guangzhou 510640, China;
2 Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, CEPREI, Guangzhou 510610, China;
3 Key Laboratory of Silicon Device Technology, Chinese Academy of Sciences, Beijing 100029, China

收稿日期:2017-12-12 修回日期:2018-01-19 出版日期:2018-06-05 发布日期:2018-06-05
通讯作者: Yuan Liu E-mail:Liuyuan@ceprei.com
基金资助:
Project supported by the Opening Fund of Key Laboratory of Silicon Device Technology,Chinese Academy of Sciences (Grant No.KLSDTJJ2018-6),the National Natural Science Foundation of China (Grant No.61574048),the Science and Technology Research Project of Guangdong Province,China (Grant No.2015B090912002),and the Pearl River S&T Nova Program of Guangzhou City,China (Grant No.201710010172).

Degradation of current-voltage and low frequency noise characteristics under negative bias illumination stress in InZnO thin film transistors

Li Wang(王黎)^1,2,3, Yuan Liu(刘远)^1,2,3, Kui-Wei Geng(耿魁伟)¹, Ya-Yi Chen(陈雅怡)^1,2, Yun-Fei En(恩云飞)²

1 School of Electronic and Information Engineering, South China University of Technology, Guangzhou 510640, China;
2 Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, CEPREI, Guangzhou 510610, China;
3 Key Laboratory of Silicon Device Technology, Chinese Academy of Sciences, Beijing 100029, China

Received:2017-12-12 Revised:2018-01-19 Online:2018-06-05 Published:2018-06-05
Contact: Yuan Liu E-mail:Liuyuan@ceprei.com
Supported by:
Project supported by the Opening Fund of Key Laboratory of Silicon Device Technology,Chinese Academy of Sciences (Grant No.KLSDTJJ2018-6),the National Natural Science Foundation of China (Grant No.61574048),the Science and Technology Research Project of Guangdong Province,China (Grant No.2015B090912002),and the Pearl River S&T Nova Program of Guangzhou City,China (Grant No.201710010172).

摘要/Abstract

摘要： The instabilities of indium-zinc oxide thin film transistors under bias and/or illumination stress are studied in this paper. Firstly, illumination experiments are performed, which indicates the variations of current-voltage characteristics and electrical parameters (such as threshold voltage and sub-threshold swing) are dominated by the stress-induced ionized oxygen vacancies and acceptor-like states. The dependence of degradation on light wavelength is also investigated. More negative shift of threshold voltage and greater sub-threshold swing are observed with the decrease of light wavelength. Subsequently, a negative bias illumination stress experiment is carried out. The degradation of the device is aggravated due to the decrease of recombination effects between ionized oxygen vacancies and free carriers. Moreover, the contributions of ionized oxygen vacancies and acceptor-like states are separated by using the mid-gap method. In addition, ionized oxygen vacancies are partially recombined at room temperature and fully recombined at high temperature. Finally, low-frequency noise is measured before and after negative bias illumination stress. Experimental results show few variations of the oxide trapped charges are generated during stress, which is consistent with the proposed mechanism.

关键词: indium-zinc oxide, thin film transistor, illumination, low frequency noise

Abstract: The instabilities of indium-zinc oxide thin film transistors under bias and/or illumination stress are studied in this paper. Firstly, illumination experiments are performed, which indicates the variations of current-voltage characteristics and electrical parameters (such as threshold voltage and sub-threshold swing) are dominated by the stress-induced ionized oxygen vacancies and acceptor-like states. The dependence of degradation on light wavelength is also investigated. More negative shift of threshold voltage and greater sub-threshold swing are observed with the decrease of light wavelength. Subsequently, a negative bias illumination stress experiment is carried out. The degradation of the device is aggravated due to the decrease of recombination effects between ionized oxygen vacancies and free carriers. Moreover, the contributions of ionized oxygen vacancies and acceptor-like states are separated by using the mid-gap method. In addition, ionized oxygen vacancies are partially recombined at room temperature and fully recombined at high temperature. Finally, low-frequency noise is measured before and after negative bias illumination stress. Experimental results show few variations of the oxide trapped charges are generated during stress, which is consistent with the proposed mechanism.

Key words: indium-zinc oxide, thin film transistor, illumination, low frequency noise

中图分类号: (Field effect devices)

85.30.Tv

73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator)) 71.23.Cq (Amorphous semiconductors, metallic glasses, glasses) 73.50.Dn (Low-field transport and mobility; piezoresistance)

王黎, 刘远, 耿魁伟, 陈雅怡, 恩云飞. Degradation of current-voltage and low frequency noise characteristics under negative bias illumination stress in InZnO thin film transistors[J]. 中国物理B, 2018, 27(6): 68504-068504.

Li Wang(王黎), Yuan Liu(刘远), Kui-Wei Geng(耿魁伟), Ya-Yi Chen(陈雅怡), Yun-Fei En(恩云飞). Degradation of current-voltage and low frequency noise characteristics under negative bias illumination stress in InZnO thin film transistors[J]. Chin. Phys. B, 2018, 27(6): 68504-068504.

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Degradation of current-voltage and low frequency noise characteristics under negative bias illumination stress in InZnO thin film transistors

Degradation of current-voltage and low frequency noise characteristics under negative bias illumination stress in InZnO thin film transistors

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