Estimation of enhanced low dose rate sensitivity mechanisms using temperature switching irradiation on gate-controlled lateral PNP transistor

doi:10.1088/1674-1056/27/3/036102

中国物理B ›› 2018, Vol. 27 ›› Issue (3): 36102-036102.doi: 10.1088/1674-1056/27/3/036102

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇下一篇

Estimation of enhanced low dose rate sensitivity mechanisms using temperature switching irradiation on gate-controlled lateral PNP transistor

Xiao-Long Li(李小龙), Wu Lu(陆妩), Xin Wang(王信), Xin Yu(于新), Qi Guo(郭旗), Jing Sun(孙静), Mo-Han Liu(刘默寒), Shuai Yao(姚帅), Xin-Yu Wei(魏昕宇), Cheng-Fa He(何承发)

1 Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China;
2 Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi 830011, China;
3 University of Chinese Academy of Sciences, Beijing 100049, China

收稿日期:2017-08-04 修回日期:2017-11-27 出版日期:2018-03-05 发布日期:2018-03-05
通讯作者: Wu Lu E-mail:luwu@ms.xjb.ac.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. U1532261 and 1630141).

Estimation of enhanced low dose rate sensitivity mechanisms using temperature switching irradiation on gate-controlled lateral PNP transistor

Xiao-Long Li(李小龙)^1,2,3, Wu Lu(陆妩)^1,2, Xin Wang(王信)^1,2, Xin Yu(于新)^1,2, Qi Guo(郭旗)^1,2, Jing Sun(孙静)^1,2, Mo-Han Liu(刘默寒)^1,2,3, Shuai Yao(姚帅)^1,2,3, Xin-Yu Wei(魏昕宇)^1,2, Cheng-Fa He(何承发)^1,2

1 Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China;
2 Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi 830011, China;
3 University of Chinese Academy of Sciences, Beijing 100049, China

Received:2017-08-04 Revised:2017-11-27 Online:2018-03-05 Published:2018-03-05
Contact: Wu Lu E-mail:luwu@ms.xjb.ac.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. U1532261 and 1630141).

摘要/Abstract

摘要： The mechanisms occurring when the switched temperature technique is applied, as an accelerated enhanced low dose rate sensitivity (ELDRS) test technique, are investigated in terms of a specially designed gate-controlled lateral PNP transistor (GLPNP) that used to extract the interface traps (Nit) and oxide trapped charges (Not). Electrical characteristics in GLPNP transistors induced by ⁶⁰Co gamma irradiation are measured in situ as a function of total dose, showing that generation of Nit in the oxide is the primary cause of base current variations for the GLPNP. Based on the analysis of the variations of Nit and Not, with switching the temperature, the properties of accelerated protons release and suppressed protons loss play critical roles in determining the increased Nit formation leading to the base current degradation with dose accumulation. Simultaneously the hydrogen cracking mechanisms responsible for additional protons release are related to the neutralization of Not extending enhanced Nit buildup. In this study the switched temperature irradiation has been employed to conservatively estimate the ELDRS of GLPNP, which provides us with a new insight into the test technique for ELDRS.

关键词: ionizing radiation damage, enhanced low dose rate sensitivity (ELDRS), switched temperature irradiation, gate-controlled lateral PNP transistor (GLPNP)

Abstract: The mechanisms occurring when the switched temperature technique is applied, as an accelerated enhanced low dose rate sensitivity (ELDRS) test technique, are investigated in terms of a specially designed gate-controlled lateral PNP transistor (GLPNP) that used to extract the interface traps (Nit) and oxide trapped charges (Not). Electrical characteristics in GLPNP transistors induced by ⁶⁰Co gamma irradiation are measured in situ as a function of total dose, showing that generation of Nit in the oxide is the primary cause of base current variations for the GLPNP. Based on the analysis of the variations of Nit and Not, with switching the temperature, the properties of accelerated protons release and suppressed protons loss play critical roles in determining the increased Nit formation leading to the base current degradation with dose accumulation. Simultaneously the hydrogen cracking mechanisms responsible for additional protons release are related to the neutralization of Not extending enhanced Nit buildup. In this study the switched temperature irradiation has been employed to conservatively estimate the ELDRS of GLPNP, which provides us with a new insight into the test technique for ELDRS.

Key words: ionizing radiation damage, enhanced low dose rate sensitivity (ELDRS), switched temperature irradiation, gate-controlled lateral PNP transistor (GLPNP)

中图分类号: (Physical radiation effects, radiation damage)

61.80.-x

61.80.Ed (γ-ray effects) 85.30.Pq (Bipolar transistors)

李小龙, 陆妩, 王信, 于新, 郭旗, 孙静, 刘默寒, 姚帅, 魏昕宇, 何承发. Estimation of enhanced low dose rate sensitivity mechanisms using temperature switching irradiation on gate-controlled lateral PNP transistor[J]. 中国物理B, 2018, 27(3): 36102-036102.

Xiao-Long Li(李小龙), Wu Lu(陆妩), Xin Wang(王信), Xin Yu(于新), Qi Guo(郭旗), Jing Sun(孙静), Mo-Han Liu(刘默寒), Shuai Yao(姚帅), Xin-Yu Wei(魏昕宇), Cheng-Fa He(何承发). Estimation of enhanced low dose rate sensitivity mechanisms using temperature switching irradiation on gate-controlled lateral PNP transistor[J]. Chin. Phys. B, 2018, 27(3): 36102-036102.

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Estimation of enhanced low dose rate sensitivity mechanisms using temperature switching irradiation on gate-controlled lateral PNP transistor

Estimation of enhanced low dose rate sensitivity mechanisms using temperature switching irradiation on gate-controlled lateral PNP transistor

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