中国物理B ›› 2017, Vol. 26 ›› Issue (12): 127302-127302.doi: 10.1088/1674-1056/26/12/127302

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Capacitance extraction method for a gate-induced quantum dot in silicon nanowire metal-oxide-semiconductor field-effect transistors

Yan-Bing Xu(徐雁冰), Hong-Guan Yang(杨红官)   

  1. School of Physics and Electronics, Hunan University, Changsha 410082, China
  • 收稿日期:2017-04-26 修回日期:2017-08-10 出版日期:2017-12-05 发布日期:2017-12-05
  • 通讯作者: Hong-Guan Yang E-mail:yanghg@hnu.edu.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 61474041).

Capacitance extraction method for a gate-induced quantum dot in silicon nanowire metal-oxide-semiconductor field-effect transistors

Yan-Bing Xu(徐雁冰), Hong-Guan Yang(杨红官)   

  1. School of Physics and Electronics, Hunan University, Changsha 410082, China
  • Received:2017-04-26 Revised:2017-08-10 Online:2017-12-05 Published:2017-12-05
  • Contact: Hong-Guan Yang E-mail:yanghg@hnu.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 61474041).

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摘要： An improved method of extracting the coupling capacitances of quantum dot structure is reported. This method is based on measuring the charge transfer current in the silicon nanowire metal-oxide-semiconductor field-effect transistor (MOSFET), in which the channel closing and opening are controlled by applying alternating-current biases with a half period phase shift to the dual lower gates. The capacitances around the dot, including fringing capacitances and barrier capacitances, are obtained by analyzing the relation between the transfer current and the applied voltage. This technique could be used to extract the capacitance parameters not only from the bulk silicon devices, but also from the silicon-on-insulator (SOI) MOSFETs.

关键词: nanowire MOSFETs, coupling capacitance, fringing capacitance, quantum dot

Abstract: An improved method of extracting the coupling capacitances of quantum dot structure is reported. This method is based on measuring the charge transfer current in the silicon nanowire metal-oxide-semiconductor field-effect transistor (MOSFET), in which the channel closing and opening are controlled by applying alternating-current biases with a half period phase shift to the dual lower gates. The capacitances around the dot, including fringing capacitances and barrier capacitances, are obtained by analyzing the relation between the transfer current and the applied voltage. This technique could be used to extract the capacitance parameters not only from the bulk silicon devices, but also from the silicon-on-insulator (SOI) MOSFETs.

Key words: nanowire MOSFETs, coupling capacitance, fringing capacitance, quantum dot

中图分类号:  (Quantum dots)

  • 73.21.La
84.37.+q (Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.)) 73.21.Hb (Quantum wires)