Simplified modeling of frequency behavior in photonic crystal vertical cavity surface emitting laser with tunnel injection quantum dot in active region

doi:10.1088/1674-1056/26/2/024211

中国物理B ›› 2017, Vol. 26 ›› Issue (2): 24211-024211.doi: 10.1088/1674-1056/26/2/024211

• ELECTROMAGNETISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS • 上一篇下一篇

Simplified modeling of frequency behavior in photonic crystal vertical cavity surface emitting laser with tunnel injection quantum dot in active region

Mehdi Riahinasab, Vahid Ahmadi, Elham Darabi

1 Department of Electrical Engineering, Science and Research Branch, Islamic Azad University Tehran, Iran;
2 Department of Electrical Engineering, Tarbiat Modares University, Tehran, Iran;
3 Plasma Physics Research Center, Science and Research Branch, Islamic Azad University, Tehran, Iran

收稿日期:2016-07-19 修回日期:2016-10-17 出版日期:2017-02-05 发布日期:2017-02-05
通讯作者: Mehdi Riahinasab, Vahid Ahmadi, Elham Darabi E-mail:m.riahinasab@srbiau.ac.ir;v_ahmadi@modares.ac.ir;e.darabi@srbiau.ac.ir

Simplified modeling of frequency behavior in photonic crystal vertical cavity surface emitting laser with tunnel injection quantum dot in active region

Mehdi Riahinasab¹, Vahid Ahmadi², Elham Darabi³

1 Department of Electrical Engineering, Science and Research Branch, Islamic Azad University Tehran, Iran;
2 Department of Electrical Engineering, Tarbiat Modares University, Tehran, Iran;
3 Plasma Physics Research Center, Science and Research Branch, Islamic Azad University, Tehran, Iran

Received:2016-07-19 Revised:2016-10-17 Online:2017-02-05 Published:2017-02-05
Contact: Mehdi Riahinasab, Vahid Ahmadi, Elham Darabi E-mail:m.riahinasab@srbiau.ac.ir;v_ahmadi@modares.ac.ir;e.darabi@srbiau.ac.ir

摘要/Abstract

摘要： In this work, the characteristics of the photonic crystal tunneling injection quantum dot vertical cavity surface emitting lasers (PhC-TIQD-VCSEL) are studied through analyzing a modified modulation transfer function. The function is based on the rate equations describing the carrier dynamics at different energy levels of dot and injector well. Although the frequency modulation response component associated with carrier dynamics in wetting layer (WL) and at excited state (ES) levels of dots limits the total bandwidth in conventional QD-VCSEL, our study shows that it can be compensated for by electron tunneling from the injector well into the dot in TIQD structure. Carrier back tunneling time is one of the most important parameters, and by increment of that, the bias current dependence of the total bandwidth will be insignificant. It is proved that at high bias current, the limitation of the WL-ES level plays an important role in reducing the total bandwidth and results in rollovers on 3-dB bandwidth-I curves. In such a way, for smaller air hole diameter of photonic crystal, the effect of this reduction is stronger.

关键词: modulation transfer function, photonic crystal (PhC), tunnel injection quantum dot (TIQD), vertical cavity surface emitting laser (VCSEL)

Abstract: In this work, the characteristics of the photonic crystal tunneling injection quantum dot vertical cavity surface emitting lasers (PhC-TIQD-VCSEL) are studied through analyzing a modified modulation transfer function. The function is based on the rate equations describing the carrier dynamics at different energy levels of dot and injector well. Although the frequency modulation response component associated with carrier dynamics in wetting layer (WL) and at excited state (ES) levels of dots limits the total bandwidth in conventional QD-VCSEL, our study shows that it can be compensated for by electron tunneling from the injector well into the dot in TIQD structure. Carrier back tunneling time is one of the most important parameters, and by increment of that, the bias current dependence of the total bandwidth will be insignificant. It is proved that at high bias current, the limitation of the WL-ES level plays an important role in reducing the total bandwidth and results in rollovers on 3-dB bandwidth-I curves. In such a way, for smaller air hole diameter of photonic crystal, the effect of this reduction is stronger.

Key words: modulation transfer function, photonic crystal (PhC), tunnel injection quantum dot (TIQD), vertical cavity surface emitting laser (VCSEL)

中图分类号: (Semiconductor lasers; laser diodes)

42.55.Px

42.55.Tv (Photonic crystal lasers and coherent effects)

Mehdi Riahinasab, Vahid Ahmadi, Elham Darabi. Simplified modeling of frequency behavior in photonic crystal vertical cavity surface emitting laser with tunnel injection quantum dot in active region[J]. 中国物理B, 2017, 26(2): 24211-024211.

参考文献 24

[1]	Kirstaedter N, Schmidt O G, Ledentsov N N, Bimberg D, Ustinov V M, Egorov A, Zhukov A E, Maximov M V, Kopev P S and Alferov Z 1996 Appl. Phys. Lett. 69 1226
[2]	Klotzkin D, Kamath K, Vineberg K, Bhattacharya P, Murty R and Laskar J 1998 IEEE Photon. Technol. Lett. 10 932
[3]	Liu G T, Stintz A, Li H, Malloy K J and Lester L F 1999 Electron. Lett. 35 1163
[4]	Sarzala R P 2004 IEEE J. Quantum Electron. 40 629
[5]	Maksimov M V, Gordeev N Y, Zaitsev S V, Kop'ev P S, Kochnev I V, Ledentsov N N, Lunev A V, Ruvimov S S, Sakharov A V, Tsatsul'nikov A F, Shernyakov Y M, Alferov Z I and Bimberg D 1997 Semiconductors 31 124
[6]	Shchekin O B and Deppe D G 2002 Appl. Phys. Lett. 80 3277
[7]	Bimberg D, Grundmann M, Heinrichsdorff F, Ledentsov N N, Ustinov V M, Zhukov A E, Kovsh A R, Maximov M V, Shernyakov Y M and Volovik B V 2000 Thin Solid Films 367 235
[8]	Yavari M H and Ahmadi V 2011 IEEE J. Sel. Top. Quantum Electron. 17 1153
[9]	Razmpa Mand Emami F 2015 Quantum Electronics 45 15
[10]	Fiore A and Markus A 2007 IEEE J. Quantum Electron. 43 287
[11]	Wang C, Grillot F and Even J 2012 IEEE J. Quantum Electron. 48 1144
[12]	Bhattacharya P, Singh J, Yoon H, Zhang X, Gutierrez-Aitken A and Lam Y 1996 IEEE J. Quantum Electron. 32 1620
[13]	Zhang X, Gutierrez-Aitken A, Klotzkin D, Bhattacharya P, Caneau C and Bhat R 1997 IEEE J. Sel. Top. Quantum Electron. 3 309
[14]	Yoon H, Gutierrez-Aitken A L, Jambunathan R, Singh J and Bhattacharya P K 1995 IEEE Photon. Technol. Lett. 7 974
[15]	Huffaker D L and Deppe D G 1997 Appl. Phys. Lett. 71 1449
[16]	Bhattacharya P, Ghosh S, Pradhan S, Singh J, Wu Z K, Urayama J, Kim K and Norris T B 2003 IEEE J. Quantum Electron. 39 952
[17]	Cerulo G, Nevou L, Liverini V, Castellano F and Faist J 2012 J. Appl. Phys. 112 43702
[18]	Wang W J, Li C, Zhou H Y, Wu H, Luan X X, Shi L and Guo X 2015 Chin. Phys. B 24 024209
[19]	Tong C Z, Xu D W, Yoon S F, Ding Y and Fan W J 2009 IEEE J. Sel. Top. Quantum Electron. 15 743
[20]	Ding Y et al. 2010 in Proc. SPIE-OSA-IEEE 7631 763102
[21]	Yu S F 1996 IEEE J. Quantum Electron. 32 1168
[22]	Zhao Y G and Mcinerney J G 1996 IEEE J. Quantum Electron. 32 1950
[23]	Abbaspour H, Ahmadi V and Yavari M H 2011 IEEE J. Sel. Top. Quantum Electron. 17 1327
[24]	Grillot F, Veselinov K, Gioannini M, Montrosset I, Even J, Piron R, Homeyer E and Loualiche S 2009 IEEE J. Quantum Electron. 45 872

Simplified modeling of frequency behavior in photonic crystal vertical cavity surface emitting laser with tunnel injection quantum dot in active region

Simplified modeling of frequency behavior in photonic crystal vertical cavity surface emitting laser with tunnel injection quantum dot in active region

RichHTML

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献 24

相关文章 5

Metrics

本文评价

推荐阅读 0

[1]	邹秀娟, 郑改革, 陈云云. Confinement of Bloch surface waves in a graphene-based one-dimensional photonic crystal and sensing applications[J]. 中国物理B, 2018, 27(5): 54102-054102.
[2]	向磊, 张星, 张建伟, 宁永强, 王立军. Stable single-mode operation of 894.6 nm VCSEL at high temperatures for Cs atomic sensing[J]. 中国物理B, 2017, 26(7): 74209-074209.
[3]	孙斌, 洪津, 孙晓兵. Solving the atmospheric scattering optical transfer function using the multi-coupled single scattering method[J]. , 2014, 23(9): 94201-094201.
[4]	曹田, 徐晨, 解意洋, 阚强, 魏思民, 毛明明, 陈弘达 . Vertical cavity surface emitting laser transverse mode and polarization control by elliptical holes photonic crystal[J]. Chin. Phys. B, 2013, 22(2): 24205-024205.
[5]	任玲, 常本康. Modulation transfer function characteristic of uniform-doping transmission-mode GaAs/GaAlAs photocathode[J]. 中国物理B, 2011, 20(8): 87308-087308.